1 Introduction

The continuous evolution and enhancement of planar bulk CMOS technology has fueled the growth of the microelectronics industry for the past several decades. When we reach the end of the technology roadmap for the classical CMOS, multiple gate MOSFETs (MuGFETs) will likely take up the baton. We have developed a multiple gate MOSFET compact model for technology/circuits development in the short term and for product design in the longer term [1].

Several different MuGFET structures and two different modes of operation are being pursued in the industry today. In the case of horizontal double gate (DG), the two gates will likely be asymmetric—having different work functions and underlying dielectric thicknesses, complicating the compact model. Also, the two gates are likely to be biased at two different voltages, known as independent gates. In the other double, triple, or all-around gate cases, the gates are biased at the same voltage, known as the common gates. Some designs will use lightly doped body to maximize mobility, others will use very high doping concentrations in thin body to obtain sufficient $V_{th}$ adjustment.

BSIM-CMG has been developed to model the electrical characteristics of common multi-gate (CMG) structures. The details of the model will be described in this document. It will serve the needs of all circuit designer/technology developers by providing versatility without compromising ease of use and computational efficiency. A separate model BSIM-IMG addresses the independent gate devices [2].

References

[1] M. V. Dunga, C.-H. Lin, D. D. Lu, W. Xiong, C. R. Cleavelin, P. Patruno, J.-R. Huang, F.-L. Yang, A. M. Niknejad, and C. Hu, "BSIM-MG: A Versatile Multi-Gate FET Model for Mixed-Signal Design," in 2007 Symposium on VLSI Technology, 2007.

[2] D. Lu, M. V. Dunga, C.-H. Lin, A. M. Niknejad, and C. Hu, "A multi-gate MOSFET compact model featuring independent-gate operation," in IEDM Technical Digest, 2007, p. 565.