BSIM-CMG Technical Manual
Technical Manual of BSIM-CMG
Table of Contents
1 Introduction
2 Model Description
3 Model Equations
3.1 Bias-Independent Calculations
3.1.1 Physical Constants
3.1.2 Effective Channel Width, Channel Length and Fin Number
3.1.3 Geometry-Dependent Source/Drain Resistances
3.1.4 Quantum Mechanical Effects
3.1.5 Binning Calculations
3.1.6 NFIN Scaling Equations
3.1.7 Length Scaling Equations
3.1.8 Temperature Effects
3.1.9 Body Doping and Gate Workfunction
3.1.10 Short Channel Effects
3.2 Terminal Voltages
3.3 Short Channel Effects
3.3.1 Weighting Function for Forward and Reverse Modes
3.3.2 Asymmetric Parameters
3.3.3 Vth Roll-Off, DIBL, and Subthreshold Slope Degradation
3.4 Surface Potential Calculation
3.4.1 Quantum Mechanical Vt correction
3.4.2 Voltage Limiting for Accumulation
3.4.3 Source Side Potential and Charge Calculation
3.5 Drain Saturation Voltage
3.5.1 Drain Saturation Voltage Calculations
3.5.2 Drain Side Potential and Charge Calculations
3.6 Average Potential, Charge and Related Variables
3.7 Quantum Mechanical Effects
3.7.1 Charge Centroid Calculation for Inversion
3.7.2 Effective Width Model
3.7.3 Effective Oxide Thickness / Effective Capacitance
3.7.4 Charge Centroid Calculation for Accumulation
3.8 Mobility Degradation and Series Resistance
3.8.1 Mobility Degradation
3.8.2 Series Resistance
3.9 Lateral Non-Uniform Doping Model
3.10 Body Effect Model
3.11 Output Conductance
3.11.1 Channel Length Modulation
3.11.2 Output Conductance Due to DIBL
3.12 Velocity Saturation
3.12.1 Current Degradation Due to Velocity Saturation
3.12.2 Non-Saturation Effect
3.13 Drain Current Model
3.14 Intrinsic Capacitance Model
3.14.1 Mobility
3.14.2 Velocity Saturation
3.14.3 Channel Length Modulation
3.14.4 Accumulation Charge
3.14.5 Surface Potential Evaluation
3.14.6 Terminal Charges
3.15 Parasitic Resistances and Capacitance Models
3.15.1 Parasitic Resistance Model
3.15.2 Diffusion Resistance
3.15.2.1 Sheet Resistance Model
3.15.2.2 Diffusion Resistance Model for Variability Modeling
3.15.3 Gate Electrode Resistance Model
3.15.4 Bias-Dependent Overlap Capacitance Model
3.15.5 Substrate Parasitics
3.15.6 Fringe Capacitances and Capacitance Model Selectors
3.16 Impact Ionization and GIDL/GISL Model
3.16.1 Impact Ionization Current
3.16.2 Gate-Induced-Drain/Source-Leakage Current
3.17 Gate Tunneling Current
3.17.1 Gate-to-Body Current
3.17.2 Gate-to-Channel Current
3.17.3 Gate-to-Source/Drain Current
3.18 Non-Quasi-Static Models
3.18.1 Gate Resistance Model
3.18.2 Charge Deficit Model
3.19 Generation-Recombination Component
3.20 Junction Current and Capacitances
3.20.1 Source Side Junction Current
3.20.2 Drain Side Junction Current
3.20.3 Source Side Junction Capacitance
3.20.4 Two-Step Source Side Junction Capacitance
3.20.5 Drain Side Junction Capacitance
3.20.6 Two-Step Drain Side Junction Capacitance
3.21 Self-Heating Model
3.21.1 Thermal Resistance and Capacitance Calculations
3.22 Noise Models
3.22.1 Flicker Noise Model
3.22.2 Thermal Noise Model (TNOIMOD = 0)
3.22.3 Thermal Noise Model (TNOIMOD = 1)
3.22.4 Gate Current Shot Noise
3.22.5 Resistor Noise
3.23 Threshold Voltage
4 Simulation Outputs
5 Parameter Extraction Procedure
5.1 Global Parameter Extraction
5.1.1 Basic Device Parameter List
5.2 Parameter Initialization
5.3 Linear Region
5.4 Saturation Region
5.5 Other Parameters Representing Important Physical Effects
5.6 Smoothing Between Linear and Saturation Regions
5.7 Other Effects
6 Local Parameter Extraction for CV-IV
7 Complete Parameter List
7.1 Instance Parameters
7.2 Model Controllers and Process Parameters
7.3 Basic Model Parameters
7.3.1 Part 1
7.3.2 Part 2
7.3.3 Part 3
7.3.4 Part 4
7.4 Parameters for Geometry-Dependent Parasitics
7.5 Parameters for Temperature Dependence and Self-Heating
7.6 Parameters for Variability Modeling
8 Built-in Model Operating Point Outputs
8.1 Outputs with __INFO__ Enabled
8.1.1 Outputs with __INFO__ Enabled - Part 1
8.1.2 Outputs with __INFO__ Enabled - Part 2
8.2 Outputs with __INFO__ and __DEBUG__ Enabled
8.3 Outputs with __INFO__ and __DEBUG__ and __SHMOD__ Enabled
9 History of BSIM-CMG Models
Acknowledgments
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3.16 Impact Ionization and GIDL/GISL Model
3.16 Impact Ionization and GIDL/GISL Model
3.16.1
Impact Ionization Current
3.16.2
Gate-Induced-Drain/Source-Leakage Current
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