3.20.2 Drain Side Junction Current
Bias-independent calculations:
The bias-independent source side junction current, Isbd, is determined as shown below:
Isbd=ADEJ⋅Jsd(T)+PDEJ⋅Jswd(T)+TFIN⋅NFINtotal⋅Jswgd(T)(3.567)
NVtmd=qkT⋅NJD(3.568)
XExpBVD=exp(−NVtmdBVD)⋅XJBVD(3.569)
Tb=1+IsbdIJTHDFWD−XExpBVD(3.570)
VjdmFwd=NVtmd⋅ln(2Tb+√Tb2+4⋅XExpBVD)(3.571)
T0=exp(NVtmdVjdmFwd)(3.572)
IVjdmFwd=Isbd(T0−T0XExpBVD+XExpBVD−1)(3.573)
DslpFwd=NVtmdIsbd⋅(T0+T0XExpBVD)(3.574)
VjdmRev=−BVD−NVtmd⋅ln[XJBVD1⋅(IsbdIJTHDREV−1)](3.575)
T1=XJBVD⋅exp(−NVtmdBVD+VjdmRev)(3.576)
IVjdmRev=Isbd⋅(1+T1)(3.577)
DslpRev=−Isbd⋅NVtmdT1(3.578)
Bias-dependent calculations:
The bias dependent source side junction current, Ied, is determined as shown below:
If Ved<VjdmRev,
Ied=[exp(NVtmdVed)−1]⋅[IVjdmRev+DslpRev⋅(Ved−VjdmRev)](3.579)
Else if VjdmRev≤Ved≤VjdmFwd,
Ied=Isbd⋅[exp(NVtmdVed)+XExpBVD−1−XJBVD⋅exp(−NVtmdBVD+Ved)]
(3.580)
Else Ved>VjdmFwd,
Ied=IVjdmFwd+DslpFwd⋅(Ved−VjdmFwd)(3.581)
Including drain side junction tunneling current:
Ied1=ADEJ⋅Jtsd(T)×[exp(max(VTSD−Ved,VTSD⋅10−3)−Ved/(k⋅TNOM/q)/NJTSD(T)×VTSD)−1](3.582)
Ied2=PDEJ⋅Jtsswd(T)×[exp(max(VTSSWD−Ved,VTSSWD⋅10−3)−Ved/(k⋅TNOM/q)/NJTSSWD(T)×VTSSWD)−1](3.583)
Ied3=TFIN⋅NFINtotal⋅Jtsswgd(T)×[exp(max(VTSSWGD−Ved,VTSSWGD⋅10−3)−Ved/(k⋅TNOM/q)/NJTSSWGD(T)×VTSSWGD)−1](3.584)
Ied=Ied−(Ied1+Ied2+Ied3)(3.585)