3.17.1 Gate-to-Body Current
Igbinv and Igbacc are calculated only if IGBMOD=1.
A=3.75956×10−7(3.512)
B=9.82222×1011(3.513)
Vaux,igbinv=NIGBINVi⋅qkT⋅ln[1+exp(NIGBINVi⋅kT/qqia−EIGBINVi)](3.514)
Igb,inv=Weff0⋅Leff⋅A⋅Tox,ratio⋅Vge⋅Vaux,igbinv⋅Igtemp⋅NFINtotal×exp[−B⋅TOXG⋅(AIGBINV(T)−BIGBINVi⋅qia)×(1+CIGBINVi⋅qia)](3.515)
A=4.97232×10−7(3.516)
B=7.45669×1011(3.517)
Vfbzb=Δϕ−Eg/2−ϕB(3.518)
T0=Vfbzb−Vge(3.519)
T1=T0−0.02(3.520)
Vaux,igbacc=NIGBACCi⋅qkT⋅ln[1+exp(NIGBACCi⋅kT/qT0)](3.521)
Voxacc=⎩⎪⎪⎨⎪⎪⎧qi,acc0.5⋅[T1+√T12−0.08⋅Vfbzb]0.5⋅[T1+√T12+0.08⋅Vfbzb]for BULKMOD=1for BULKMOD≠1 and Vfbzb≤0for BULKMOD≠1 and Vfbzb>0(3.522)
Igb,acc=Weff0⋅Leff⋅A⋅Tox,ratio⋅Vge⋅Vaux,igbacc⋅Igtemp⋅NFINtotal×exp[−B⋅TOXG⋅(AIGBACC(T)−BIGBACCi⋅Voxacc)×(1+CIGBACCi⋅Voxacc)](3.523)
For BULKMOD=1, Igb simply flows from the gate into the substrate. For BULKMOD=0, Igb mostly flows into the source because the potential barrier for holes is lower at the source, which has a lower potential. To ensure continuity when Vds switches sign, Igb is partitioned into a source component, Igbs and a drain component, Igbd using a partition function:
Igbs=(Igb,inv+Igb,acc)⋅Wf(3.524)
Igbd=(Igb,inv+Igb,acc)⋅Wr(3.525)
Wf and Wr are defined in Equations (3.216) and (3.217), respectively.