3.10 Body Effect Model
CAUTION: The above lateral non-uniform doping model or the body effect model are empirical and have their limits as to how much Vth shift can be achieved without distorting the I-V curve. Over usage could lead to negative gm or negative gds. For example, the lateral non-uniform doping model could be used in combination with the mobility model to achieve high Vth shift between C-V and I-V curved to avoid any distortion of higher order derivatives.
The equations showing the determination of the bulk charge (qi_acc_for_QM) are provided next. This bulk charge is critical in terms of determination of the centroid of charge in the accumulation region.
If BULKMOD≠0,
T9=(2.0⋅nVtm)K1√Vtm(3.350)
T0=2T9(3.351)
T2=VtmVge−(Δϕ−Eg−Vtm+ln(NcNBODYi)+DELVFBACC)(3.352)
where Vge is the gate to substrate voltage.
The following equations calculate the accumulation charge and related quantities considering QM effects.
If (T2⋅Vtm)>(ϕB+T9⋅√ϕB⋅Vtm),
T1=√T2−1.0+T0⋅T0−T0(3.353)
T10=1.0+T1⋅T1(3.354)
Else,
T3=0.5⋅T2−3.0⋅(1.0+√2T9)(3.355)
T10=T3+√T3⋅T3+6⋅T2(3.356)
If T2<0,
T4=T9T2−T10(3.357)
T10=−ln(1.0−T10+T4⋅T4)(3.358)
Else,
T11=exp(−T10)(3.359)
T4=√T2−1.0+T11+T0⋅T0−T0(3.360)
T10=1.0−T11+T4⋅T4(3.361)
T6=exp(−T10)−1.0(3.362)
T7=√T6+T10(3.363)
If T10>10−15,
e0=−(T2−T10)+T9⋅T7(3.364)
e1=1.0−T9⋅0.5⋅T7T6(3.365)
T8=T10−e1e0(3.366)
T11=exp(−T8)−1.0(3.367)
T12=√T11+T8(3.368)
qb_acc_s=−T9+T12⋅Vtm(3.369)
Else if T10<−10−15,
e0=−(T2−T10)−T9⋅T7(3.370)
e1=1.0+T9⋅0.5⋅T7T6(3.371)
T8=T10−e1e0(3.372)
T12=T9⋅√exp(−T8)+T8−1.0(3.373)
Else,
T12=0.0(3.374)
T8=0.0(3.375)
Then,
qb_acc_s=T12⋅Vtm(3.376)
qi_acc_for_QM=T9⋅exp(2−T8)⋅Vtm(3.377)
qb_acc_d=qb_acc_s(3.378)
psipclamp=0.5⋅(T8+1.0+√(T8−1.0)⋅(T8−1.0)+0.25⋅2.0⋅2.0)(3.379)
sqrtpsip=√psiclamp(3.380)
nq=1.0+sqrtpsipT9(3.381)