3.15.3 Gate Electrode Resistance Model

The gate electrode resistance model can be switched on by setting $RGATEMOD = 1$. This introduces an internal node "ge". The gate electrode resistor ($R_{geltd}$) is placed between the external "g" node and the internal "ge" node.

The gate electrode resistance model takes into account the number of gate contacts, $NGCON$. $NGCON = 1$ indicates single-sided contact; $NGCON = 2$ indicates double-sided contact. $R_{geltd}$ is given by

$R_{geltd} = \begin{cases} \dfrac{RGEXT + RGFIN \cdot NFIN / 3}{NF} &\text{for } NGCON = 1 \\ \\ \dfrac{RGEXT / 2 + RGFIN \cdot NFIN / 12}{NF} &\text{for } NGCON = 2 \end{cases} \qquad (3.476)$