7.4 Parameters for Geometry-Dependent Parasitics

The parameters listed in this section are for $RGEOMOD$ = 1 and $CGEOMOD$ = 2.

• Parameter: $HEPI$
• Description: Height of the raised source/drain on top of the fin.
• Default: 10 nm
• Range: Unbounded
• Unit: $m$

• Parameter: $TSILI$
• Description: Thickness of the silicide on top of the raised source/drain.
• Default: 10 nm
• Range: Unbounded
• Unit: $m$

• Parameter: $RHOC$
• Description: Contact resistivity at the silicon/silicide interface.
• Default: 1.0e-12
• Range: 1.0e-18 ~ 1.0e-8
• Unit: $\Omega - m^2$

• Parameter: $RHORSD$
• Description: Average resistivity of silicon in the raised source/drain region.
• Default: Calculated
• Range: > 0
• Unit: $\Omega - m$

• Parameter: $CRATIO$
• Description: Ratio of the corner area filled with silicon to the total corner area.
• Default: 0.5
• Range: 0 ~ 1
• Unitless

• Parameter: $DELTAPRSD$
• Description: Change in silicon/silicide interface length due to non-rectangular epi.
• Default: 0
• Range: $> -FPITCH$
• Unit: $m$

• Parameter: $SDTERM$
• Description: Indicator of whether the source/drain are terminated with silicide.
• Default: 0
• Range: 0 ~ 1
• Unitless

• Parameter: $LSP$
• Description: Thickness of the gate sidewall spacer.
• Default: $0.2 (L + XL)$
• Range: > 0
• Unit: $m$

• Parameter: $LDG$
• Description: Lateral diffusion gradient in the fin extension region.
• Default: 5 nm
• Range: > 0
• Unit: $m$

• Parameter: $EPSRSP$
• Description: Relative dielectric constant of the gate sidewall spacer material.
• Default: 3.9
• Range: > 1
• Unitless

• Parameter: $TGATE$
• Description: Gate height on top of the hard mask.
• Default: 30 nm
• Range: > 0
• Unit: $m$

• Parameter: $TMASK$
• Description: Height of the hard mask on top of the fin.
• Default: 30 nm
• Range: > 0
• Unit: $m$

• Parameter: $ASILIEND$
• Description: Extra silicide cross-sectional area at the two ends of the FinFET.
• Default: 0
• Range: > 0
• Unit: $m^2$

• Parameter: $ARSDEND$
• Description: Extra raised source/drain cross-sectional area at the two ends of the FinFET.
• Default: 0
• Range: > 0
• Unit: $m^2$

• Parameter: $PRSDEND$
• Description: Extra silicon/silicide interface perimeter at the two ends of the FinFET.
• Default: 0
• Range: > 0
• Unit: $m$

• Parameter: $NSDE$
• Description: Active doping concentration at the channel edge.
• Default: 2.0e25
• Range: 1.0e25 ~ 1.0e26
• Unit: $m^3$

• Parameter: $RGEOA$
• Description: Fitting parameter for $RGEOMOD$ = 1.
• Default: 1.0
• Range: Unbounded
• Unitless

• Parameter: $RGEOB$
• Description: Fitting parameter for $RGEOMOD$ = 1.
• Default: 0
• Range: Unbounded
• Unit: $m^{-1}$

• Parameter: $RGEOC$
• Description: Fitting parameter for $RGEOMOD$ = 1.
• Default: 0
• Range: Unbounded
• Unit: $m^{-1}$

• Parameter: $RGEOD$
• Description: Fitting parameter for $RGEOMOD$ = 1.
• Default: 0
• Range: Unbounded
• Unit: $m^{-1}$

• Parameter: $RGEOE$
• Description: Fitting parameter for $RGEOMOD$ = 1.
• Default: 0
• Range: Unbounded
• Unit: $m^{-1}$

• Parameter: $CGEOA$
• Description: Fitting parameter for $CGEOMOD$ = 2.
• Default: 1.0
• Range: Unbounded
• Unitless

• Parameter: $CGEOB$
• Description: Fitting parameter for $CGEOMOD$ = 2.
• Default: 0
• Range: Unbounded
• Unit: $m^{-1}$

• Parameter: $CGEOC$
• Description: Fitting parameter for $CGEOMOD$ = 2.
• Default: 0
• Range: Unbounded
• Unit: $m^{-1}$

• Parameter: $CGEOD$
• Description: Fitting parameter for $CGEOMOD$ = 2.
• Default: 0
• Range: Unbounded
• Unit: $m^{-1}$

• Parameter: $CGEOE$
• Description: Fitting parameter for $CGEOMOD$ = 2.
• Default: 0
• Range: Unbounded
• Unitless