8.1.1 Outputs with __INFO__ Enabled - Part 1

Outputs	Units	Description
$WEFF$	$m$	Effective width (I-V).
$LEFF$	$m$	Effective length (I-V).
$WEFFCV$	$m$	Effective width (C-V).
$LEFFCV$	$m$	Effective length (C-V).
$IDS$	$A$	Drain-to-source current.
$IDEFF$	$A$	Total current flowing out the drain.
$ISEFF$	$A$	Total current flowing out the source.
$IGTOT$	$A$	Total current flowing out the gate.
$IDSGEN$	$A$	Generation/recombination current.
$III$	$A$	Impact ionization current.
$IGS$	$A$	Gate-to-source tunneling current.
$IGD$	$A$	Gate-to-drain tunneling current.
$IGCS$	$A$	Source component of the gate-to-channel tunneling current.
$IGCD$	$A$	Drain component of the gate-to-channel tunneling current.
$IGBS$	$A$	Source component of the gate-to-body tunneling current.
$IGBD$	$A$	Drain component of the gate-to-body tunneling current.
$IGIDL$	$A$	Gate-induced drain leakage.
$IGISL$	$A$	Gate-induced source leakage.
$IJSB$	$A$	Source-to-substrate current.
$IJDB$	$A$	Drain-to-substrate current.
$ISUB$	$A$	Total current flowing out the substrate.
$BETA$	$A/V^2$	Drain current prefactor per fin per finger.
$VTH$	$V$	Analytic threshold voltage.
$VDSSAT$	$V$	Drain-to-source saturation voltage.
$VFB$	$V$	Flatband voltage.
$GM$	$A/V$	$\partial I_{ds} / \partial V_{gs}$.
$GDS$	$A/V$	$\partial I_{ds} / \partial V_{ds}$.
$GMBS$	$A/V$	$\partial I_{ds} / \partial V_{bs}$.
$QGI$	$C$	Intrinsic gate charge.
$QDI$	$C$	Intrinsic drain charge.
$QSI$	$C$	Intrinsic source charge.
$QBI$	$C$	Intrinsic body charge.
$QG$	$C$	Total gate charge.
$QD$	$C$	Total drain charge.
$QS$	$C$	Total source charge.
$QB$	$C$	Total body charge.