3.14 Intrinsic Capacitance Model

In BSIM-CMG both the intrinsic capacitances and parasitic capacitances are modeled. In this section we describe the formulation of intrinsic capacitances. The formulation of parasitic capacitances will be described in Section 3.15

To ensure charge conservation, terminal charges instead of branch capacitances are used as state variables. The terminal charges $Q_g$, $Q_b$, $Q_s$, and $Q_d$ are the charges associated with the gate, bulk, source, and drain terminals, respectively. Please refer to [9] for details of the terminal charge derivation.

References

[9] S. Venugopalan, "A Compact Model of Cylindrical Gate MOSFET for Circuit Simulations," UC Berkeley Master's Report, December 2009.