7.3.3 Basic Model Parameters - Part 3

Note: Binnable parameters are marked as ${}^{(b)}$.

• Parameter: $SII0^{(b)}$
• Description: $V_{gs}$-dependent paramter of $I_{ii}$ for $IIMOD$ = 2.
• Default: 0.5
• Range: Unbounded
• Unit: $V^{-1}$

• Parameter: $SII1^{(b)}$
• Description: $V_{gs}$-dependent paramter of $I_{ii}$ for $IIMOD$ = 2.
• Default: 0.1
• Range: Unbounded
• Unitless

• Parameter: $SII2^{(b)}$
• Description: $V_{gs}$-dependent paramter of $I_{ii}$ for $IIMOD$ = 2.
• Default: 0
• Range: Unbounded
• Unit: $V$

• Parameter: $SIID^{(b)}$
• Description: $V_{gs}$-dependent paramter of $I_{ii}$ for $IIMOD$ = 2.
• Default: 0
• Range: Unbounded
• Unit: $V$

• Parameter: $EOTACC$
• Description: $SiO_2$ equivalent gate dielectric thickness for accumulation region.
• Default: $EOT$
• Range: > 0.1 nm
• Unit: $m$

• Parameter: $DELVFBACC$
• Description: Additional $V_{fb}$ shift required for accumulation region.
• Default: 0
• Range: Unbounded
• Unit: $V$

• Parameter: $PCLMCV^{(b)}$
• Description: Channel length modulation (CLM) parameter for the capacitance model.
• Default: 0.013
• Range: > 0
• Unitless

• Parameter: $CFS^{(b)}$
• Description: Source-side outer fringe capacitance for $CGEOMOD$ = 0.
• Default: 2.5e-11
• Range: > 0
• Unit: $F/m$

• Parameter: $CFD^{(b)}$
• Description: Drain-side outer fringe capacitance for $CGEOMOD$ = 0.
• Default: $CFS$
• Range: > 0
• Unit: $F/m$

• Parameter: $CGSO$
• Description: Non-LDD region source-gate overlap capacitance per unit channel width for $CGEOMOD$ = 0 or 2.
• Default: Calculated
• Range: > 0
• Unit: $F/m$

• Parameter: $CGDO$
• Description: Non-LDD region drain-gate overlap capacitance per unit channel width for $CGEOMOD$ = 0 or 2.
• Default: Calculated
• Range: > 0
• Unit: $F/m$

• Parameter: $CGSL^{(b)}$
• Description: Overlap capacitance between gate and lightly-doped source region for $CGEOMOD$ = 0 or 2.
• Default: $CGSL$
• Range: > 0
• Unit: $F/m$

• Parameter: $CGDL^{(b)}$
• Description: Overlap capacitance between gate and lightly-doped drain region for $CGEOMOD$ = 0 or 2.
• Default:
• Range:
• Unit: $F/m$

• Parameter: $CKAPPAS^{(b)}$
• Description: Coefficient of bias-dependent overlap capacitance for the source side for $CGEOMOD$ = 0 or 2.
• Default: 0.6
• Range: > 0.02
• Unit: $V$

• Parameter: $CKAPPAD^{(b)}$
• Description: Coefficient of bias-dependent overlap capacitance for the drain side for $CGEOMOD$ = 0 or 2.
• Default: $CKAPPAS$
• Range: > 0.02
• Unit: $V$

• Parameter: $CGBO$
• Description: Gate-substrate overlap capacitance per unit channel length per finger per gate contact.
• Default: 0
• Range: > 0
• Unit: $F/m$

• Parameter: $CGBN$
• Description: Gate-substrate overlap capacitance per unit channel length per finger per fin.
• Default: 0
• Range: > 0
• Unit: $F/m$

• Parameter: $CSDESW$
• Description: Source/drain sidewall fringing capacitance per unit length.
• Default: 0
• Range: > 0
• Unit: $F/m$

• Parameter: $CJS$
• Description: Unit area source-side junction capacitance at zero bias.
• Default: 0.0005
• Range: > 0
• Unit: $F/m^2$

• Parameter: $CJD$
• Description: Unit area drain-side junction capacitance at zero bias.
• Default: $CJS$
• Range: > 0
• Unit: $F/m^2$

• Parameter: $CJSWS$
• Description: Unit length sidewall junction capacitance at zero bias on the source side.
• Default: 5.0e-10
• Range: > 0
• Unit: $F/m$

• Parameter: $CJSWD$
• Description: Unit length sidewall junction capacitance at zero bias on the drain side.
• Default: $CJSWS$
• Range: > 0
• Unit: $F/m$

• Parameter: $CJSWGS$
• Description: Unit length gate sidewall junction capacitance at zero bias on the source side.
• Default: 0
• Range: > 0
• Unit: $F/m$

• Parameter: $CJSWGD$
• Description: Unit length gate sidewall junction capacitance at zero bias on the drain side.
• Default: $CJSWGS$
• Range: > 0
• Unit: $F/m$

• Parameter: $PBS$
• Description: Bottom junction built-in potential on the source side.
• Default: 1.0
• Range: > 0.01
• Unit: $V$

• Parameter: $PBD$
• Description: Bottom junction built-in potential on the drain side.
• Default: $PBS$
• Range: > 0.01
• Unit: $V$

• Parameter: $PBSWS$
• Description: Isolation-edge sidewall junction built-in potential on the source side.
• Default: 1.0
• Range: > 0.01
• Unit: $V$

• Parameter: $PBSWD$
• Description: Isolation-edge sidewall junction built-in potential on the drain side.
• Default: $PBSWS$
• Range: > 0.01
• Unit: $V$

• Parameter: $PBSWGS$
• Description: Gate-edge sidewall junction built-in potential on the source side.
• Default: $PBSWS$
• Range: > 0.01
• Unit: $V$

• Parameter: $PBSWGD$
• Description: Gate-edge sidewall junction built-in potential on the drain side.
• Default: $PBSWGS$
• Range: > 0.01
• Unit: $V$

• Parameter: $MJS$
• Description: Source bottom junction capacitance grading coefficient.
• Default: 0.5
• Range: Unbounded
• Unitless

• Parameter: $MJD$
• Description: Drain bottom junction capacitance grading coefficient.
• Default: $MJS$
• Range: Unbounded
• Unitless

• Parameter: $MJSWS$
• Description: Isolation-edge sidewall junction capacitance grading coefficient on the source side.
• Default: 0.33
• Range: Unbounded
• Unitless

• Parameter: $MJSWD$
• Description: Isolation-edge sidewall junction capacitance grading coefficient on the drain side.
• Default: $MJSWS$
• Range: Unbounded
• Unitless

• Parameter: $MJSWGS$
• Description: Gate-edge sidewall junction capacitance grading coefficient on the source side.
• Default: $MJSWS$
• Range: Unbounded
• Unitless

• Parameter: $MJSWGD$
• Description: Gate-edge sidewall junction capacitance grading coefficient on the drain side.
• Default: $MJSWGS$
• Range: Unbounded
• Unitless

• Parameter: $SJS$
• Description: Constant for source-side two-step second junction capacitance.
• Default: 0
• Range: > 0
• Unitless

• Parameter: $SJD$
• Description: Constant for drain-side two-step second junction capacitance.
• Default: $SJS$
• Range: > 0
• Unitless

• Parameter: $SJSWS$
• Description: Constant for sidewall two-step second junction capacitance on the source side.
• Default: 0
• Range: > 0
• Unitless

• Parameter: $SJSWD$
• Description: Constant for sidewall two-step second junction capacitance on the drain side.
• Default: $SJSWS$
• Range: > 0
• Unitless

• Parameter: $SJSWGS$
• Description: Constant for gate sidewall two-step second junction capacitance on the source side.
• Default: 0
• Range: > 0
• Unitless

• Parameter: $SJSWGD$
• Description: Constant for gate sidewall two-step second junction capacitance on the drain side.
• Default: $SJSWGS$
• Range: > 0
• Unitless

• Parameter: $MJS2$
• Description: Source bottom two-step second junction capacitance grading coefficient.
• Default: 0.125
• Range: Unbounded
• Unitless

• Parameter: $MJD2$
• Description: Drain bottom two-step second junction capacitance grading coefficient.
• Default: $MJS2$
• Range: Unbounded
• Unitless

• Parameter: $MJSWS2$
• Description: Isolation-edge sidewall two-step second junction capacitance grading coefficient on the source side.
• Default: 0.083
• Range: Unbounded
• Unitless

• Parameter: $MJSWD2$
• Description: Isolation-edge sidewall two-step second junction capacitance grading coefficient on the drain side.
• Default: $MJSWS2$
• Range: Unbounded
• Unitless

• Parameter: $MJSWGS2$
• Description: Gate-edge sidewall two-step second junction capacitance grading coefficient on the source side.
• Default: $MJSWS2$
• Range: Unbounded
• Unitless

• Parameter: $MJSWGD2$
• Description: Gate-edge sidewall two-step second junction capacitance grading coefficient on the drain side.
• Default: $MJSWGS2$
• Range: Unbounded
• Unitless

• Parameter: $JSS$
• Description: Bottom source junction reverse saturation current density.
• Default: 1.0e-4
• Range: > 0
• Unit: $A/m^2$

• Parameter: $JSD$
• Description: Bottom drain junction reverse saturation current density.
• Default: $JSS$
• Range: > 0
• Unit: $A/m^2$

• Parameter: $JSWS$
• Description: Unit length reverse saturation current for isolation-edge source sidewall junction.
• Default: 0
• Range: > 0
• Unit: $A/m$

• Parameter: $JSWD$
• Description: Unit length reverse saturation current for isolation-edge drain sidewall junction.
• Default: $JSWS$
• Range: > 0
• Unit: $A/m$

• Parameter: $JSWGS$
• Description: Unit length reverse saturation current for gate-edge source sidewall junction.
• Default: 0
• Range: > 0
• Unit: $A/m$

• Parameter: $JSWGD$
• Description: Unit length reverse saturation current for gate-edge drain sidewall junction.
• Default: $JSWGS$
• Range: > 0
• Unit: $A/m$

• Parameter: $JTSS$
• Description: Bottom source junction trap-assisted saturation current density.
• Default: 0
• Range: > 0
• Unit: $A/m^2$

• Parameter: $JTSD$
• Description: Bottom drain junction trap-assisted saturation current density.
• Default: $JTSS$
• Range: > 0
• Unit: $A/m^2$

• Parameter: $JTSSWS$
• Description: Unit length trap-assisted saturation current for isolation-edge source sidewall junction.
• Default: 0
• Range: > 0
• Unit: $A/m$

• Parameter: $JTSSWD$
• Description: Unit length trap-assisted saturation current for isolation-edge drain sidewall junction.
• Default: $JTSSWS$
• Range: > 0
• Unit: $A/m$

• Parameter: $JTSSWGS$
• Description: Unit length trap-assisted saturation current for gate-edge source sidewall junction.
• Default: 0
• Range: > 0
• Unit: $A/m$

• Parameter: $JTSSWGD$
• Description: Unit length trap-assisted saturation current for gate-edge drain sidewall junction.
• Default: $JTSSWGS$
• Range: > 0
• Unit: $A/m$

• Parameter: $JTWEFF$
• Description: Trap-assisted tunneling current width dependence.
• Default: 0
• Range: > 0
• Unit: $m$

• Parameter: $NJS$
• Description: Source junction emission coefficient.
• Default: 1.0
• Range: > 0
• Unitless

• Parameter: $NJD$
• Description: Drain junction emission coefficient.
• Default: NJS
• Range: > 0
• Unitless

• Parameter: $NJTS$
• Description: Non-ideality factor for $JTSS$.
• Default: 20
• Range: > 0
• Unitless

• Parameter: $NJTSD$
• Description: Non-ideality factor for $JTSD$.
• Default: $NJTS$
• Range: > 0
• Unitless

• Parameter: $NJTSSW$
• Description: Non-ideality factor for $JTSSWS$.
• Default: 20
• Range: > 0
• Unitless

• Parameter: $NJTSSWD$
• Description: Non-ideality factor for $JTSSWD$.
• Default: $NJTSSW$
• Range: > 0
• Unitless

• Parameter: $NJTSSWG$
• Description: Non-ideality factor for $JTSSWGS$.
• Default: 20
• Range: > 0
• Unitless

• Parameter: $NJTSSWGD$
• Description: Non-ideality factor for $JTSSWGD$.
• Default: $NJTSSWG$
• Range: > 0
• Unitless

• Parameter: $VTSS$
• Description: Bottom source junction trap-assisted current voltage dependent parameter.
• Default: 10
• Range: > 0
• Unit: $V$

• Parameter: $VTSD$
• Description: Bottom drain junction trap-assisted current voltage dependent parameter.
• Default: $VTSS$
• Range: > 0
• Unit: $V$

• Parameter: $VTSSWS$
• Description: Unit length trap-assisted current voltage dependent parameter for sidewall source junction.
• Default: 10
• Range: > 0
• Unit: $V$

• Parameter: $VTSSWD$
• Description: Unit length trap-assisted current voltage dependent parameter for sidewall drain junction.
• Default: $VTSSWS$
• Range: > 0
• Unit: $V$

• Parameter: $VTSSWGS$
• Description: Unit length trap-assisted current voltage dependent parameter for gate-edge sidewall source junction.
• Default: 10
• Range: > 0
• Unit: $V$

• Parameter: $VTSSWGD$
• Description: Unit length trap-assisted current voltage dependent parameter for gate-edge sidewall drain junction.
• Default: $VTSSWGS$
• Range: > 0
• Unit: $V$