7.3.1 Basic Model Parameters - Part 1

Note: Binnable parameters are marked as ${}^{(b)}$.

• Parameter: $CIT^{(b)}$
• Description: Parameter for interface trap.
• Default: 0
• Range: Unbounded
• Unit: $F/m^2$

• Parameter: $CDSC^{(b)}$
• Description: Coupling capacitance between S/D and channel.
• Default: 0.007
• Range: > 0
• Unit: $F/m^2$

• Parameter: $CDSCN1$
• Description: $NFIN$ dependence of $CDSC$.
• Default: 0
• Range: > -0.08
• Unitless

• Parameter: $CDSCN2$
• Description: $NFIN$ dependence of $CDSC$.
• Default: 1.0e5
• Range: > 1.0e-5
• Unitless

• Parameter: $CDSCD^{(b)}$
• Description: Drain-bias sensitivity of $CDSC$
• Default: 0.007
• Range: > 0
• Unit: $F/m^2$

• Parameter: $CDSCDN1$
• Description: $NFIN$ dependence of $CDSCD$.
• Default: 0
• Range: > -0.08
• Unitless

• Parameter: $CDSCDN2$
• Description: $NFIN$ dependence of $CDSCD$.
• Default: 1.0e5
• Range: > 1.0e-5
• Unitless

• Parameter: $CDSCDR^{(b)}$
• Description: Reverse-mode drain-bias sensitivity.
• Default: $CDSCD$
• Range: > 0
• Unit: $F/m^2$

• Parameter: $CDSCDRN1$
• Description: $NFIN$ dependence of $CDSCDR$.
• Default: $CDSCDN1$
• Range: > -0.08
• Unitless

• Parameter: $CDSCDRN2$
• Description: $NFIN$ dependence of $CDSCDR$.
• Default: $CDSCDN2$
• Range: > 1.0e-5
• Unitless

• Parameter: $DVT0^{(b)}$
• Description: SCE coefficient.
• Default: 0
• Range: > 0
• Unitless

• Parameter: $DVT1^{(b)}$
• Description: SCE exponent coefficient.
• Default: 0.6
• Range: > 0
• Unitless

• Parameter: $DVT1SS^{(b)}$
• Description: Subthreshold swing exponent coefficient.
• Default: $DVT1$
• Range: > 0
• Unitless

• Parameter: $PHIN^{(b)}$
• Description: Nonuniform vertical doping effect on surface potential.
• Default: 0.05
• Range: Unbounded
• Unit: $V$

• Parameter: $ETA0^{(b)}$
• Description: DIBL coefficient.
• Default: 0.6
• Range: > 0
• Unitless

• Parameter: $ETA0LT$
• Description: Coupled $NFIN$ and length dependence of $ETA0$.
• Default: 0.0
• Range: Unbounded
• Unit: $1/m$

• Parameter: $ETA0N1$
• Description: $NFIN$ dependence of $ETA0$.
• Default: 0
• Range: > -0.08
• Unitless

• Parameter: $ETA0N2$
• Description: $NFIN$ dependence of $ETA0$.
• Default: 0
• Range: > 1.0e-5
• Unitless

• Parameter: $DSUB^{(b)}$
• Description: DIBL exponent coefficient.
• Default: 1.06
• Range: > 0
• Unitless

• Parameter: $DVTP0$
• Description: Coefficient for drain-induced $V_{th}$ shift (DITS).
• Default: 0
• Range: Unbounded
• Unitless

• Parameter: $DVTP1$
• Description: DITS exponent coefficient.
• Default: 0
• Range: Unbounded
• Unitless

• Parameter: $K1RSCE^{(b)}$
• Description: Prefactor for reverse short channel effect.
• Default: 0
• Range: Unbounded
• Unit: $V^{1/2}$

• Parameter: $LPE0^{(b)}$
• Description: Equivalent length of pocket region at zero bias.
• Default: 5e-9
• Range: $> -L_{eff}$
• Unit: $m$

• Parameter: $K0^{(b)}$
• Description: Lateral $NUD$ parameter.
• Default: 0
• Range: Unbounded
• Unit: $V$

• Parameter: $K0SI^{(b)}$
• Description: Correction factor for strong inversion/$g_m$.
• Default: 1.0
• Range: > 0
• Unitless

• Parameter: $K1SI^{(b)}$
• Description: Correction factor for strong inversion, used in $M_{ob}$.
• Default: $K0SI$
• Range: > 0
• Unitless

• Parameter: $DVTSHIFT^{(b)}$
• Description: Additional $V_{th}$ shift handle.
• Default: 0
• Range: Unbounded
• Unit: $V$

• Parameter: $PHIBE^{(b)}$
• Description: Body-effect voltage parameter.
• Default: 0.7
• Range: 0.2 ~ 1.2
• Unit: $V$

• Parameter: $K1^{(b)}$
• Description: Body effect coefficient for subthreshold region.
• Default: 0
• Range: > 0
• Unit: $V^{1/2}$

• Parameter: $K1SAT^{(b)}$
• Description: Body effect coefficient for saturation region.
• Default: 0
• Range: Unbounded
• Unit: $V^{-1/2}$

• Parameter: $QMFACTOR^{(b)}$
• Description: Prefactor for QM $V_{th}$ shift correction.
• Default: 0
• Range: Unbounded
• Unitless

• Parameter: $QMTCENIV^{(b)}$
• Description: Prefactor/switch for QM effective width correction for I-V.
• Default: 0
• Range: Unbounded
• Unitless

• Parameter: $QMTCENCV^{(b)}$
• Description: Prefactor/switch for QM effective width and oxide thickness correction for C-V.
• Default: 0
• Range: Unbounded
• Unitless

• Parameter: $QMTCENCVA^{(b)}$
• Description: Prefactor/switch for QM effective width and oxide thickness correction for accumulation region C-V.
• Default: 0
• Range: Unbounded
• Unitless

• Parameter: $ETAQM$
• Description: Body charge coefficient for QM charge centroid.
• Default: 0.54
• Range: Unbounded
• Unitless

• Parameter: $QM0$
• Description: Normalization parameter for QM charge centroid at inversion.
• Default: 0.001
• Range: > 0
• Unit: $V$

• Parameter: $PQM$
• Description: Fitting parameter for QM charge centroid at inversion.
• Default: 0.66
• Range: Unbounded
• Unitless

• Parameter: $QM0ACC$
• Description: Normalization parameter for QM charge centroid at accumulation.
• Default: 0.001
• Range: > 0
• Unit: $V$

• Parameter: $PQMACC$
• Description: Fitting parameter for QM charge centroid at accumulation.
• Default: 0.66
• Range: Unbounded
• Unitless

• Parameter: $VSAT^{(b)}$
• Description: Saturation velocity for the saturation region.
• Default: 85000
• Range: Unbounded
• Unit: $m/s$

• Parameter: $VSATN1$
• Description: $NFIN$ dependence of $VSAT$.
• Default: 0
• Range: > -0.08
• Unitless

• Parameter: $VSATN2$
• Description: $NFIN$ dependence of $VSAT$.
• Default: 1.0e5
• Range: > 1.0e-5
• Unitless

• Parameter: $VSAT1^{(b)}$
• Description: Saturation velocity for the linear region in forward mode.
• Default: $VSAT$
• Range: Unbounded
• Unit: $m/s$

• Parameter: $VSAT1N1$
• Description: $NFIN$ dependence of $VSAT1$.
• Default: 0
• Range: > -0.08
• Unitless

• Parameter: $VSAT1N2$
• Description: $NFIN$ dependence of $VSAT1$.
• Default: 1.0e5
• Range: > 1.0e-5
• Unitless

• Parameter: $VSAT1R^{(b)}$
• Description: Saturation velocity for the linear region in reverse mode.
• Default: $VSAT1$
• Range: Unbounded
• Unit: $m/s$

• Parameter: $VSAT1RN1$
• Description: $NFIN$ dependence of $VSAT1R$.
• Default: $VSAT1N1$
• Range: > -0.08
• Unitless

• Parameter: $VSAT1RN2$
• Description: $NFIN$ dependence of $VSAT1R$.
• Default: $VSAT1N2$
• Range: > 1.0e-5
• Unitless

• Parameter: $DELTAVSAT^{(b)}$
• Description: Velocity saturation parameter in the linear region.
• Default: 1.0
• Range: > 0.01
• Unitless

• Parameter: $PSAT^{(b)}$
• Description: Exponent for field for velocity saturation.
• Default: 2.0
• Range: > 2.0
• Unitless

• Parameter: $KSATIV^{(b)}$
• Description: Parameter for long channel $V_{dsat}$.
• Default: 1.0
• Range: Unbounded
• Unitless

• Parameter: $VSATCV^{(b)}$
• Description: Saturation velocity for the capacitance model.
• Default: $VSAT$
• Range: Unbounded
• Unit: $m/s$

• Parameter: $DELTAVSATCV^{(b)}$
• Description: Velocity saturation parameter in the linear region for the capacitance model.
• Default: $DELTAVSAT$
• Range: > 0.01
• Unitless

• Parameter: $PSATCV^{(b)}$
• Description: Exponent for field for velocity saturation for the capacitance model.
• Default: $PSAT$
• Range: > 2.0
• Unitless

• Parameter: $MEXP^{(b)}$
• Description: Smoothing function factor for $V_{dsat}$.
• Default: 4.0
• Range: > 2.0
• Unitless

• Parameter: $MEXPR^{(b)}$
• Description: Reverse-mode smoothing function factor for $V_{dsat}$.
• Default: $MEXP$
• Range: > 2.0
• Unitless

• Parameter: $PTWG^{(b)}$
• Description: Correction factor for velocity saturation in forward mode.
• Default: 0
• Range: Unbounded
• Unit: $V^{-2}$

• Parameter: $PTWGR^{(b)}$
• Description: Correction factor for velocity saturation in reverse mode.
• Default: $PTWG$
• Range: Unbounded
• Unit: $V^{-2}$

• Parameter: $A1^{(b)}$
• Description: Non-saturation effect parameter in strong inversion region.
• Default: 0
• Range: Unbounded
• Unit: $V^{-2}$

• Parameter: $A2^{(b)}$
• Description: Non-saturation effect parameter in moderate inversion region.
• Default: 0
• Range: Unbounded
• Unit: $V^{-1}$

• Parameter: $U0^{(b)}$
• Description: Low field mobility.
• Default: 0.03
• Range: Unbounded
• Unit: $m^2/V-s$

• Parameter: $U0LT$
• Description: Coupled $NFIN$ and Length dependence of $U0$.
• Default: 0
• Range: Unbounded
• Unit: $1/m$

• Parameter: $U0N1$
• Description: $NFIN$ dependence of $U0$.
• Default: 0
• Range: > -0.08
• Unitless

• Parameter: $U0N2$
• Description: $NFIN$ dependence of $U0$.
• Default: 1.0e5
• Range: > 1.0e-5
• Unitless

• Parameter: $CHARGEWF$
• Description: Average channel charge weighting (sampling) factor. 1: source-side, 0: middle, -1: drain-side.
• Default: 0
• Range: -1 ~ 1
• Unitless

• Parameter: $ETAMOB^{(b)}$
• Description: Effective field parameter.
• Default: 2.0
• Range: Unbounded
• Unitless

• Parameter: $UP^{(b)}$
• Description: Mobility L coefficient.
• Default: 0
• Range: Unbounded
• Unit: $\mu m^{LPA}$

• Parameter: $LPA$
• Description: Mobility L power coefficient.
• Default: 1.0
• Range: Unbounded
• Unitless

• Parameter: $UA^{(b)}$
• Description: Phonon/surface roughness scattering parameter.
• Default: 0.3
• Range: > 0
• Unit: ${cm/MV}^{EU}$

• Parameter: $UC^{(b)}$
• Description: Body effect coefficient of mobility for $BULKMOD$ = 1.
• Default: 0
• Range: Unbounded
• Unit: ${ (1.0e-6 \times cm/{MV}^2 ) }^{EU}$

• Parameter: $EU^{(b)}$
• Description: Phonon/surface roughness scattering parameter.
• Default: 2.5
• Range: > 0
• Unit: $cm/MV$

• Parameter: $UD^{(b)}$
• Description: Columbic scattering parameter.
• Default: 0
• Range: > 0
• Unit: $cm/MV$

• Parameter: $UCS^{(b)}$
• Description: Columbic scattering parameter.
• Default: 1.0
• Range: > 0
• Unitless

• Parameter: $PCLM^{(b)}$
• Description: Channel length modulation (CLM) parameter.
• Default: 0.013
• Range: > 0
• Unitless

• Parameter: $PCLMG^{(b)}$
• Description: Gate bias-dependent parameter for channel length modulation (CLM).
• Default: 0
• Range: Unbounded
• Unitless

• Parameter: $RDSWMIN$
• Description: For $RDSMOD$ = 0, S/D extension resistance per unit width at high $V_{gs}$.
• Default: 0
• Range: > 0
• Unit: $\Omega - \mu_m^{WR}$

• Parameter: $RDSW^{(b)}$
• Description: For $RDSMOD$ = 0, zero bias S/D extension resistance per unit width.
• Default: 100.0
• Range: > 0
• Unit: $\Omega - \mu_m^{WR}$

• Parameter: $RSWMIN$
• Description: For $RDSMOD$ = 1, source extension resistance per unit width at high $V_{gs}$.
• Default: 0
• Range: > 0
• Unit: $\Omega - \mu_m^{WR}$

• Parameter: $RSW^{(b)}$
• Description: For $RDSMOD$ = 1, zero bias source extension resistance per unit width.
• Default: 50
• Range: > 0
• Unit: $\Omega - \mu_m^{WR}$

• Parameter: $RDWMIN$
• Description: For $RDSMOD$ = 1, drain extension resistance per unit width at high $V_{gs}$.
• Default: 0
• Range: > 0
• Unit: $\Omega - \mu_m^{WR}$

• Parameter: $RDW^{(b)}$
• Description: For $RDSMOD$ = 1, zero bias drain extension resistance per unit width.
• Default: 50
• Range: > 0
• Unit: $\Omega - \mu_m^{WR}$