5.7 Other Effects

Step 15: Temperature and self-heating effects.

Extracted Parameters Device and Experimental Data Extraction Methodology
Thermal resistance (RTH0 RTH0 ) and capacitances (CTH0 CTH0 ) for the self-heating model and etc. Ids I_{ds} vs. Vgs V_{gs} @ Vd=Vdd V_d = V_{dd} under different temperatures. Observe data trend and tune RTH0 RTH0 , CTH0 CTH0 , TNOM TNOM , TBGASUB TBGASUB , TBGBSUB TBGBSUB , etc.

Step 16: Gate/junction leakage current.

Extracted Parameters Device and Experimental Data Extraction Methodology
Gate tunneling current and junction current parameters. Igb I_{gb} vs. Vgs V_{gs} @ Vd=0V V_d = 0V . Observe data trend and tune NIGBINV NIGBINV , AIGBINV AIGBINV , BIGBINV BIGBINV , CIGBINV CIGBINV , EIGBINV EIGBINV , AS AS , PS1 PS1 , PS2 PS2 , NJS NJS , IJTHSFWD IJTHSFWD , BVS BVS , XJBVS XJBVS , AD AD , PD1 PD1 , PD2 PD2 , NJD NJD , IJTHDFWD IJTHDFWD , BVD BVD , XJBVD XJBVD , etc.

Step 17: Advanced features

Extracted Parameters Device and Experimental Data Extraction Methodology
Non-quasi-static effect, noise model, poly-depletion, generation-recombination etc. S-parameters, noise figure, CV measurement, etc. Extract XRCRG1 XRCRG1 , XRCRG2 XRCRG2 , NOIA NOIA , NOIB NOIB , NOIC NOIC , FN1 FN1 , FN2 FN2 , AIGEN AIGEN , BIGEN BIGEN , etc.

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