8.1.2 Outputs with __INFO__ Enabled - Part 2

Outputs	Units	Description
$CGGI$	$F$	$\partial Q_{g,intrinsic} / \partial V_g$.
$CGSI$	$F$	$\partial Q_{g,intrinsic} / \partial V_s$.
$CGDI$	$F$	$\partial Q_{g,intrinsic} / \partial V_d$.
$CGEI$	$F$	$\partial Q_{g,intrinsic} / \partial V_e$.
$CDGI$	$F$	$\partial Q_{d,intrinsic} / \partial V_g$.
$CDDI$	$F$	$\partial Q_{d,intrinsic} / \partial V_d$.
$CDSI$	$F$	$\partial Q_{d,intrinsic} / \partial V_s$.
$CDEI$	$F$	$\partial Q_{d,intrinsic} / \partial V_e$.
$CSGI$	$F$	$\partial Q_{s,intrinsic} / \partial V_g$.
$CSDI$	$F$	$\partial Q_{s,intrinsic} / \partial V_d$.
$CSSI$	$F$	$\partial Q_{s,intrinsic} / \partial V_s$.
$CSEI$	$F$	$\partial Q_{s,intrinsic} / \partial V_e$.
$CEGI$	$F$	$\partial Q_{e,intrinsic} / \partial V_g$.
$CEDI$	$F$	$\partial Q_{e,intrinsic} / \partial V_d$.
$CESI$	$F$	$\partial Q_{e,intrinsic} / \partial V_s$.
$CEEI$	$F$	$\partial Q_{e,intrinsic} / \partial V_e$.
$CGG$	$F$	$\partial Q_{g,total} / \partial V_g$.
$CGS$	$F$	$\partial Q_{g,total} / \partial V_s$.
$CGD$	$F$	$\partial Q_{g,total} / \partial V_d$.
$CGE$	$F$	$\partial Q_{g,total} / \partial V_e$.
$CDG$	$F$	$\partial Q_{d,total} / \partial V_g$.
$CDD$	$F$	$\partial Q_{d,total} / \partial V_d$.
$CDS$	$F$	$\partial Q_{d,total} / \partial V_s$.
$CDE$	$F$	$\partial Q_{d,total} / \partial V_e$.
$CSG$	$F$	$\partial Q_{s,total} / \partial V_g$.
$CSD$	$F$	$\partial Q_{s,total} / \partial V_d$.
$CSS$	$F$	$\partial Q_{s,total} / \partial V_s$.
$CSE$	$F$	$\partial Q_{s,total} / \partial V_e$.
$CEG$	$F$	$\partial Q_{e,total} / \partial V_g$.
$CED$	$F$	$\partial Q_{e,total} / \partial V_d$.
$CES$	$F$	$\partial Q_{e,total} / \partial V_s$.
$CEE$	$F$	$\partial Q_{e,total} / \partial V_e$.
$CGSEXT$	$F$	Gate-to-source overlap and outer fringing capacitances.
$CGDEXT$	$F$	Gate-to-drain overlap and outer fringing capacitances.
$CGBOV$	$F$	Gate-to-body overlap capacitance.
$CJST$	$F$	Junction and overlap capacitances on the source side.
$CJDT$	$F$	Junction and overlap capacitances on the drain side.
$RSGEO$	$\Omega$	External bias-independent source resistance.
$RDGEO$	$\Omega$	External bias-independent drain resistance.
$CFGEO$	$F$	Geometric parasitic capacitanec for $CGEOMOD$ = 1.
$T\_TOTAL\_K$	$\degree K$	Device temperature including self-heating in $\degree K$.
$T\_TOTAL\_C$	$\degree C$	Device temperature including self-heating in $\degree C$.
$T\_DELTA\_SH$	$\degree C$ or $\degree K$	Temperature rise due to self-heating.