3.1.5 Binning Calculations

The optional binning methodology [3] is adopted in BSIM-CMG.

For a given $L$, $NFIN$, each model parameter $PARAM_i$ is calculated as a function of $PARAM$, a length dependent term $LPARAM$, a number of fin per finger ($NFIN$) dependent term $NPARAM$, and a product $L \times NFIN$ term, $PPARAM$:

$\Delta L1 = LINT + \frac{LL}{(L + DLBIN)^{LLN}} \qquad (3.72)$

$L_{eff1} = L + DLBIN - 2 \Delta L1 \qquad (3.73)$

$\begin{aligned} PARAM_i &= PARAM + \frac{1.0e-6}{L_{eff1} + DLBIN} \cdot LPARAM + \frac{1.0}{NFIN} \cdot NPARAM \qquad (3.74) \\ \\ &+ \frac{1.0e-6}{NFIN \cdot (L_{eff1} + DLBIN)} \cdot PPARAM \end{aligned}$

For the list of binnable parameters, please refer to the complete parameter list at the end of this technical manual.

References

[3] Y. Cheng and C. Hu, MOSFET Modeling and BSIM3 User's Guide. Kluwer Academic Publishers, 1999.