7.2 Model Controllers and Process Parameters

Note: Binnable parameters are marked as ${}^{(b)}$.

• Parameter: $TYPE$
• Description: NMOS = 1, PMOS = 0
• Default: NMOS
• Range: PMOS or NMOS
• Unitless

• Parameter: $BULKMOD$
• Description: Substrate model selector. 0: SOI substrate, 1: bulk substrate.
• Default: 0
• Range: 0 or 1
• Unitless

• Parameter: $GEOMOD$
• Description: Structure selector. 0: double gate, 1: triple gate, 2: quadruple gate, 3: cylindrical gate.
• Default: 1
• Range: 0, 1, 2, or 3
• Unitless

• Parameter: $GEO1SW$
• Description: For $CGEOMOD$ = 1 only, $GEO1SW$ = 1 enables the parameters $COVS$, $COVD$, $CGSP$, and $CGDP$ to be in $F$ per fin, per gate-finger, per unit channel width.
• Default: 0
• Range: 0 or 1
• Unitless

• Parameter: $RDSMOD$
• Description: Bias-dependent source/drain extension resistance model selector. 0: internal bias-dependent, 1: both external, 2: both internal.
• Default: 0
• Range: 0 or 1
• Unitless

• Parameter: $ASYMMOD$
• Description: Asymmetric I-V model selector. 0: turned off, 1: turned on.
• Default: 0
• Range: 0 or 1
• Unitless

• Parameter: $IGCMOD$
• Description: Model selector for $I_{gc}$, $I_{gs}$ and $I_{gd}$. 0: turned off, 1: turned on.
• Default: 0
• Range: 0 or 1
• Unitless

• Parameter: $IGBMOD$
• Description: Model selector for $I_{gb}$. 0: turned off, 1: turned on.
• Default: 0
• Range: 0 or 1
• Unitless

• Parameter: $GIDLMOD$
• Description: GIDL/GISL current switcher. 0: turned off, 1: BSIM4 based, 2: BSIM-SOI based.
• Default: 0
• Range: 0 or 1
• Unitless

• Parameter: $NQSMOD$
• Description: NQS gate resistor and $gi$ node switcher. 0: turned off, 1: turned on.
• Default: 0
• Range: 0 or 1
• Unitless

• Parameter: $SHMOD$
• Description: Self-heating and $t$ node switcher. 0: turned off, 1: turned on.
• Default: 0
• Range: 0 or 1
• Unitless

• Parameter: $RGATEMOD$
• Description: Gate electrode resistor and $ge$ node switcher. 0: turned off, 1: turned on.
• Default: 0
• Range: 0 or 1
• Unitless

• Parameter: $RGEOMOD$
• Description: Bias-independent parasitic resistance model selector (see Section 3.15).
• Default: 0
• Range: 0 or 1
• Unitless

• Parameter: $CGEOMOD$
• Description: Parasitic capacitance model selector (see Section 3.15).
• Default: 0
• Range: 0, 1, or 2
• Unitless

• Parameter: $CAPMOD$
• Description: Accumulation region capacitance model selector. 0: no accumulation capacitance, 1: accumulation capacitance included.
• Default: 0
• Range: 0 or 1
• Unitless

• Parameter: $TEMPMOD$
• Description: Temperature dependence model selector.
• Default: 0
• Range: 0 or 1
• Unitless

• Parameter: $TNOIMOD$
• Description: Thermal noise model selector, 0: charge-based, 1: correlated noise model.
• Default: 0
• Range: 0 or 1
• Unitless

• Parameter: $SH\_WARN$
• Description: Warning on Self-heating network being disabled, 0: turned off, 1: turned on.
• Default: 0
• Range: 0 or 1
• Unitless

• Parameter: $IGCLAMP$
• Description: $I_{gs}$, $I_{gd}$ clamp selector. 0: turned off, 1: turned on.
• Default: 1
• Range: 0 or 1
• Unitless

• Parameter: $XL$
• Description: $L$ offset for channel length due to mask/etch effect.
• Default: 0
• Range: Unbounded
• Unit: $m$

• Parameter: $LINT$
• Description: Length reduction parameter for dopant diffusion effect.
• Default: 0
• Range: Unbounded
• Unit: $m$

• Parameter: $LL$
• Description: Length reduction parameter for dopant diffusion effect.
• Default: 0
• Range: Unbounded
• Unit: $m^{(LLN + 1)}$

• Parameter: $LLN$
• Description: Length reduction parameter for dopant diffusion effect.
• Default: 1.0
• Range: Unbounded
• Unitless

• Parameter: $DLC$
• Description: Length reduction parameter for C-V for dopant diffusion effect.
• Default: 0
• Range: Unbounded
• Unit: $m$

• Parameter: $DLCACC$
• Description: Length reduction parameter for C-V in accumulation region ($BULKMOD$ = 1; $CAPMOD$ = 1).
• Default: 0
• Range: Unbounded
• Unit: $m$

• Parameter: $LLC$
• Description: Length reduction parameter for C-V for dopant diffusion effect.
• Default: 0
• Range: Unbounded
• Unit: $m^{(LLN+1)}$

• Parameter: $DLBIN$
• Description: Length reduction parameter for binning.
• Default: 0
• Range: Unbounded
• Unit: $m$

• Parameter: $EOT$
• Description: $SiO_2$ equivalent gate dielectric thickness including inversion layer thickness.
• Default: 1 nm
• Range: > 0.1 nm
• Unit: $m$

• Parameter: $TOXP$
• Description: Physical oxide thickness.
• Default: 1.2 nm
• Range: > 0.1 nm
• Unit: $m$

• Parameter: $EOTBOX$
• Description: $SiO_2$ equivalent buried oxide thickness including substrate depletion.
• Default: 140 nm
• Range: > 1 nm
• Unit: $m$

• Parameter: $HFIN$
• Description: Fin height.
• Default: 30 nm
• Range: > 1 nm
• Unit: $m$

• Parameter: $FECH$
• Description: End-channel factor for different orientaion/shape (mobility difference between the side channel and the top channel is handled by this parameter).
• Default: 1.0
• Range: > 0
• Unitless

• Parameter: $DELTAW$
• Description: Reduction of effective width due to shape of fin.
• Default: 0
• Range: Unbounded
• Unit: $m$

• Parameter: $FECHCV$
• Description: C-V end-channel factor for different orientaion/shape.
• Default: 1.0
• Range: > 0
• Unitless

• Parameter: $DELTAWCV$
• Description: C-V reduction of effective width due to shape of fin.
• Default: 0
• Range: Unbounded
• Unit: $m$

• Parameter: $NBODY^{(b)}$
• Description: Channel doping concentration.
• Default: 1e22
• Range: Unbounded
• Unit: $m^{-3}$

• Parameter: $NBODYN1$
• Description: $NFIN$ dependence of $NBODY$.
• Default: 0
• Range: > -0.08
• Unitless

• Parameter: $NBODYN2$
• Description: $NFIN$ dependence of $NBODY$.
• Default: 1.0e5
• Range: > 1.0e-5
• Unitless

• Parameter: $NSD$
• Description: Source/drain doping concentration.
• Default: 2.0e26
• Range: 2.0e25 ~ 1.0e27
• Unit: $m^{-3}$

• Parameter: $PHIG(b)$
• Description: Gate workfunction.
• Default: 4.61
• Range: > 0
• Unit: $eV$

• Parameter: $PHIGL$
• Description: Length dependence of gate workfunction.
• Default: 0.0
• Range: Unbounded
• Unit: $eV/m$

• Parameter: $PHIGLT$
• Description: Coupled $NFIN$ and length dependence of gate workfunction.
• Default: 0.0
• Range: Unbounded
• Unit: $1/m$

• Parameter: $PHIGN1$
• Description: $NFIN$ dependence of $PHIG$.
• Default: 0
• Range: > -0.08
• Unitless

• Parameter: $PHIGN2$
• Description: $NFIN$ dependence of $PHIG$.
• Default: 1.0e5
• Range: > 1.0e-5
• Unitless

• Parameter: $EPSROX$
• Description: Relative dielectric constant of the gate insulator.
• Default: 3.9
• Range: > 1
• Unitless

• Parameter: $EPSRSUB$
• Description: Relative dielectric constant of the channel material.
• Default: 11.9
• Range: > 1
• Unitless

• Parameter: $EASUB$
• Description: Electron affinity of the substrate material.
• Default: 4.05
• Range: > 0
• Unit: $eV$

• Parameter: $NI0SUB$
• Description: Intrinsic carrier concentration of channel at 300.15 K.
• Default: 1.1e16
• Range: Unbounded
• Unit: $m^{-3}$

• Parameter: $BG0SUB$
• Description: Band gap of the channel material at 300.15 K.
• Default: 1.12
• Range: Unbounded
• Unit: $eV$

• Parameter: $NC0SUB$
• Description: Conduction band density of states at 300.15 K.
• Default: 2.86e25
• Range: Unbounded
• Unit: $m^{-3}$

• Parameter: $NGATE^{(b)}$
• Description: Parameter for poly gate doping. Set $NGATE$ = 0 for metal gates.
• Default: 0.0
• Range: Unbounded
• Unit: $m^{-3}$

• Parameter: $Imin$
• Description: Parameter for voltage clamping for inversion region calculation in accumulation.
• Default: 1.0e-15
• Range: Unbounded
• Unit: $A/m^2$