Table of Contents

• 1 Introduction
• 2 Model Description
• 3 Model Equations
  • 3.1 Bias-Independent Calculations
    • 3.1.1 Physical Constants
    • 3.1.2 Effective Channel Width, Channel Length and Fin Number
    • 3.1.3 Geometry-Dependent Source/Drain Resistances
    • 3.1.4 Quantum Mechanical Effects
    • 3.1.5 Binning Calculations
    • 3.1.6 NFIN Scaling Equations
    • 3.1.7 Length Scaling Equations
    • 3.1.8 Temperature Effects
    • 3.1.9 Body Doping and Gate Workfunction
    • 3.1.10 Short Channel Effects
  • 3.2 Terminal Voltages
  • 3.3 Short Channel Effects
    • 3.3.1 Weighting Function for Forward and Reverse Modes
    • 3.3.2 Asymmetric Parameters
    • 3.3.3 Vth Roll-Off, DIBL, and Subthreshold Slope Degradation
  • 3.4 Surface Potential Calculation
    • 3.4.1 Quantum Mechanical Vt correction
    • 3.4.2 Voltage Limiting for Accumulation
    • 3.4.3 Source Side Potential and Charge Calculation
  • 3.5 Drain Saturation Voltage
    • 3.5.1 Drain Saturation Voltage Calculations
    • 3.5.2 Drain Side Potential and Charge Calculations
  • 3.6 Average Potential, Charge and Related Variables
  • 3.7 Quantum Mechanical Effects
    • 3.7.1 Charge Centroid Calculation for Inversion
    • 3.7.2 Effective Width Model
    • 3.7.3 Effective Oxide Thickness / Effective Capacitance
    • 3.7.4 Charge Centroid Calculation for Accumulation
  • 3.8 Mobility Degradation and Series Resistance
    • 3.8.1 Mobility Degradation
    • 3.8.2 Series Resistance
  • 3.9 Lateral Non-Uniform Doping Model
  • 3.10 Body Effect Model
  • 3.11 Output Conductance
    • 3.11.1 Channel Length Modulation
    • 3.11.2 Output Conductance Due to DIBL
  • 3.12 Velocity Saturation
    • 3.12.1 Current Degradation Due to Velocity Saturation
    • 3.12.2 Non-Saturation Effect
  • 3.13 Drain Current Model
  • 3.14 Intrinsic Capacitance Model
    • 3.14.1 Mobility
    • 3.14.2 Velocity Saturation
    • 3.14.3 Channel Length Modulation
    • 3.14.4 Accumulation Charge
    • 3.14.5 Surface Potential Evaluation
    • 3.14.6 Terminal Charges
  • 3.15 Parasitic Resistances and Capacitance Models
    • 3.15.1 Parasitic Resistance Model
    • 3.15.2 Diffusion Resistance
      • 3.15.2.1 Sheet Resistance Model
      • 3.15.2.2 Diffusion Resistance Model for Variability Modeling
    • 3.15.3 Gate Electrode Resistance Model
    • 3.15.4 Bias-Dependent Overlap Capacitance Model
    • 3.15.5 Substrate Parasitics
    • 3.15.6 Fringe Capacitances and Capacitance Model Selectors
  • 3.16 Impact Ionization and GIDL/GISL Model
    • 3.16.1 Impact Ionization Current
    • 3.16.2 Gate-Induced-Drain/Source-Leakage Current
  • 3.17 Gate Tunneling Current
    • 3.17.1 Gate-to-Body Current
    • 3.17.2 Gate-to-Channel Current
    • 3.17.3 Gate-to-Source/Drain Current
  • 3.18 Non-Quasi-Static Models
    • 3.18.1 Gate Resistance Model
    • 3.18.2 Charge Deficit Model
  • 3.19 Generation-Recombination Component
  • 3.20 Junction Current and Capacitances
    • 3.20.1 Source Side Junction Current
    • 3.20.2 Drain Side Junction Current
    • 3.20.3 Source Side Junction Capacitance
    • 3.20.4 Two-Step Source Side Junction Capacitance
    • 3.20.5 Drain Side Junction Capacitance
    • 3.20.6 Two-Step Drain Side Junction Capacitance
  • 3.21 Self-Heating Model
    • 3.21.1 Thermal Resistance and Capacitance Calculations
  • 3.22 Noise Models
    • 3.22.1 Flicker Noise Model
    • 3.22.2 Thermal Noise Model (TNOIMOD = 0)
    • 3.22.3 Thermal Noise Model (TNOIMOD = 1)
    • 3.22.4 Gate Current Shot Noise
    • 3.22.5 Resistor Noise
  • 3.23 Threshold Voltage
• 4 Simulation Outputs
• 5 Parameter Extraction Procedure
  • 5.1 Global Parameter Extraction
    • 5.1.1 Basic Device Parameter List
  • 5.2 Parameter Initialization
  • 5.3 Linear Region
  • 5.4 Saturation Region
  • 5.5 Other Parameters Representing Important Physical Effects
  • 5.6 Smoothing Between Linear and Saturation Regions
  • 5.7 Other Effects
• 6 Local Parameter Extraction for CV-IV
• 7 Complete Parameter List
  • 7.1 Instance Parameters
  • 7.2 Model Controllers and Process Parameters
  • 7.3 Basic Model Parameters
    • 7.3.1 Basic Model Parameters - Part 1
    • 7.3.2 Basic Model Parameters - Part 2
    • 7.3.3 Basic Model Parameters - Part 3
    • 7.3.4 Basic Model Parameters - Part 4
  • 7.4 Parameters for Geometry-Dependent Parasitics
  • 7.5 Parameters for Temperature Dependence and Self-Heating
  • 7.6 Parameters for Variability Modeling
• 8 Built-in Model Operating Point Outputs
  • 8.1 Outputs with __INFO__ Enabled
    • 8.1.1 Outputs with __INFO__ Enabled - Part 1
    • 8.1.2 Outputs with __INFO__ Enabled - Part 2
  • 8.2 Outputs with __INFO__ and __DEBUG__ Enabled
  • 8.3 Outputs with __INFO__ and __DEBUG__ and __SHMOD__ Enabled
• 9 History of BSIM-CMG Models
• Acknowledgments