3.1.1 Physical Constants

Physical quantities in BSIM-CMG are in MKS units unless specified otherwise.

$q = 1.60219 \times 10^{-19} \qquad (3.1)$

$\epsilon_0 = 8.8542 \times 10^{-12} \qquad (3.2)$

$\hbar = 1.05457 \times 10^{-34} \qquad (3.3)$

$m_{e} = 9.11 \times 10^{-31} \qquad (3.4)$

$k = 1.3787 \times 10^{-23} \qquad (3.5)$

$\epsilon_{sub} = EPSRSUB \cdot \epsilon_0 \qquad (3.6)$

$EPSRSUB$ is the relative dielectric constant of the channel material.

$\epsilon_{ox} = EPSROX \cdot \epsilon_0 \qquad (3.7)$

$EPSROX$ is the relative dielectric constant of the gate insulator.

$C_{ox} = \frac{3.9 \cdot \epsilon_0}{EOT} \qquad (3.8)$

$EOT$ is the SiO2 equivalent gate dielectric thickness including the inversion layer thickness.

$C_{si} = \frac{\epsilon_{sub}}{TFIN} \qquad (3.9)$

$\epsilon_{ratio} = \frac{EPSRSUB}{3.9} \qquad (3.10)$