3.16.2 Gate-Induced-Drain/Source-Leakage Current

GIDL/GISL are calculated only for $GIDLMOD = 1$.

$\begin{aligned} T_0 &= AGIDL_i \cdot W_{eff0} \cdot \Bigg( \dfrac{V_{ds} - V_{gs} - EGIDL_i + V_{fbsd}}{\epsilon_{ratio} \cdot EOT} \Bigg)^{PGIDL_i} \\ & \times exp \Bigg( - \dfrac{\epsilon_{ratio} \cdot EOT \cdot BGIDL(T)}{V_{ds} - V_{gs} - EGIDL_i + V_{fbsd}} \Bigg) \times NFIN_{total} \end{aligned} \qquad (3.507)$

$I_{gidl} = \begin{cases} T_0 \cdot \dfrac{V_{de}^3}{CGIDL_i + V_{de}^3} &\text{for } BULKMOD = 1 \\ T_0 \cdot V_{ds} &\text{for } BULKMOD = 0 \end{cases} \qquad (3.508)$

$\begin{aligned} T_1 &= AGISL_i \cdot W_{eff0} \cdot \Bigg( \dfrac{-V_{ds} - V_{gd} - EGISL_i + V_{fbsd}}{\epsilon_{ratio} \cdot EOT} \Bigg)^{PGISL_i} \\ & \times exp \Bigg( - \dfrac{\epsilon_{ratio} \cdot EOT \cdot BGISL(T)}{-V_{ds} - V_{gd} - EGISL_i + V_{fbsd}} \Bigg) \times NFIN_{total} \end{aligned} \qquad (3.509)$

$I_{gisl} = \begin{cases} T_1 \cdot \dfrac{V_{se}^3}{CGISL_i + V_{se}^3} &\text{for } BULKMOD = 1 \\ T_1 \cdot V_{sd} &\text{for } BULKMOD = 0 \end{cases} \qquad (3.510)$

Note: For $V_{de}$ or $V_{se} \le 0$, GIDL/GISL current is zero [15], where $V_{de}$ and $V_{se}$ are the drain-to-channel, source-to-channel voltages.

References

[15] T. Y. Chan, J. Chen, P. K. Ko, and C. Hu, "The impact of gate-induced drain leakage current on MOSFET scaling," in IEDM Technical Digest, 1987, pp. 718-721.