7.3.4 Basic Model Parameters - Part 4

Note: Binnable parameters are marked as ${}^{(b)}$.

• Parameter: $IJTHSFWD$
• Description: Forward source diode breakdown limiting current.
• Default: 0.1
• Range: $> 10 \cdot I_{sbs}$
• Unit: $A$

• Parameter: $IJTHDFWD$
• Description: Forward drain diode breakdown limiting current.
• Default: $IJTHSFWD$
• Range: $> 10 \cdot I_{sbd}$
• Unit: $A$

• Parameter: $IJTHSREV$
• Description: Reverse source diode breakdown limiting current.
• Default: 0.1
• Range: $> 10 \cdot I_{sbs}$
• Unit: $A$

• Parameter: $IJTHDREV$
• Description: Reverse drain diode breakdown limiting current.
• Default: $IJTHSREV$
• Range: $> 10 \cdot I_{sbd}$
• Unit: $A$

• Parameter: $BVS$
• Description: Source diode breakdown voltage.
• Default: 10.0
• Range: Unbounded
• Unit: $V$

• Parameter: $BVD$
• Description: Drain diode breakdown voltage.
• Default: $BVS$
• Range: Unbounded
• Unit: $V$

• Parameter: $XJBVS$
• Description: Fitting parameter for source diode breakdown current.
• Default: 1.0
• Range: Unbounded
• Unitless

• Parameter: $XJBVD$
• Description: Fitting parameter for source diode breakdown current.
• Default: $XJBVS$
• Range: Unbounded
• Unitless

• Parameter: $LINTIGEN$
• Description: $L_{int}$ offset for recombination/generation current.
• Default: 0
• Range: $< L_{eff}/2$
• Unit: $m$

• Parameter: $NTGEN^{(b)}$
• Description: Parameter for recombination/generation current.
• Default: 1.0
• Range: > 0
• Unitless

• Parameter: $AIGEN^{(b)}$
• Description: Parameter for recombination/generation current.
• Default: 0
• Range: Unbounded
• Unit: $(m-V)^{-3}$

• Parameter: $BIGEN^{(b)}$
• Description: Parameter for recombination/generation current.
• Default: 0
• Range: Unbounded
• Unit: $(m-V)^{-3}$

• Parameter: $XRCRG1^{(b)}$
• Description: Parameter for non-quasi-static gate resistance for $NQSMOD$ = 1 or 2.
• Default: 12.0
• Range: 0 or > 0.001
• Unitless

• Parameter: $XRCRG2^{(b)}$
• Description: Parameter for non-quasi-static gate resistance for $NQSMOD$ = 1 or 2.
• Default: 1.0
• Range: Unbounded
• Unitless

• Parameter: $NSEG$
• Description: Number of channel segments for $NQSMOD$ = 3.
• Default: 5
• Range: 4 ~ 10
• Unitless

• Parameter: $EF$
• Description: Flicker noise frequency exponent.
• Default: 1.0
• Range: 0 ~ 2
• Unitless

• Parameter: $LINTNOI$
• Description: Lint offset for icker noise calculation.
• Default: 0
• Range: $< L_{eff}/2$
• Unit: $m$

• Parameter: $EM$
• Description: Flicker noise parameter.
• Default: 4.1e7
• Range: Unbounded
• Unit: $V/m$

• Parameter: $NOIA$
• Description: Flicker noise parameter.
• Default: 6.25e39
• Range: Unbounded
• Unit: ${eV}^{-1} \cdot s^{1 - EF} \cdot m^{-3}$

• Parameter: $NOIB$
• Description: Flicker noise parameter.
• Default: 3.125e24
• Range: Unbounded
• Unit: ${eV}^{-1} \cdot s^{1 - EF} \cdot m^{-1}$

• Parameter: $NOIC$
• Description: Flicker noise parameter.
• Default: 8.750e7
• Range: Unbounded
• Unit: ${eV}^{-1} \cdot s^{1 - EF} \cdot m$

• Parameter: $NTNOI$
• Description: Thermal noise parameter.
• Default: 1.0
• Range: > 0
• Unitless

• Parameter: $RNOIA$
• Description: Thermal noise parameter.
• Default: 0.577
• Range: Unbounded
• Unitless

• Parameter: $RNOIB$
• Description: Thermal noise parameter.
• Default: 0.37
• Range: Unbounded
• Unitless

• Parameter: $TNOIA$
• Description: Thermal noise parameter.
• Default: 1.5
• Range: > 0
• Unit: $m^{-1}$

• Parameter: $TNOIB$
• Description: Thermal noise parameter.
• Default: 3.5
• Range: > 0
• Unit: $m^{-1}$

• Parameter: $NVTM$
• Description: If provided, $NVTM$ will override $nkT/q$ calculated in the model.
• Default: $nkT/q$
• Range: Unbounded
• Unit: $V$

• Parameter: $THETASCE$
• Description: If provided, $THETASCE$ will override $\Theta_{SCE}$ calculated in the model.
• Default: $\Theta_{SCE}$
• Range: Unbounded
• Unitless

• Parameter: $THETASW$
• Description: If provided, $THETASW$ will override $\Theta_{SW}$ calculated in the model.
• Default: $\Theta_{SW}$
• Range: Unbounded
• Unitless

• Parameter: $THETADIBL$
• Description: If provided, $THETADIBL$ will override $\Theta_{DIBL}$ calculated in the model.
• Default: $\Theta_{DIBL}$
• Range: Unbounded
• Unitless

• Parameter: $TFIN\_BASE$
• Description: Base fin thickness for trapezoidal triple gate.
• Default: 15 nm
• Range: > 1 nm
• Unit: $m$

• Parameter: $TFIN\_TOP$
• Description: Top fin thickness for trapezoidal triple gate.
• Default: 15 nm
• Range: Unbounded
• Unit: $m$

• Parameter: $ACH\_UFCM$
• Description: Area of the channel for the unified model.
• Default: 1.0
• Range: Unbounded
• Unit: $m^2$

• Parameter: $CINS\_UFCM$
• Description: Insulator capacitance for the unified model.
• Default: 1.0
• Range: Unbounded
• Unit: $F$

• Parameter: $W\_UFCM$
• Description: Effective channel width for the unified model.
• Default: 1.0
• Range: Unbounded
• Unit: $m$

• Parameter: $ALPHA\_UFCM$
• Description: Mobile charge scaling term taking QM effects into account.
• Default: $1/1.8$
• Range: Unbounded
• Unitless