3.5.1 Drain Saturation Voltage Calculations
If BULKMOD=0
Dmobs=1+UA(T)⋅(Eeffs)EU+[21⋅(1+1e−2/Coxqis)]UCS(T)UD(T)
If BULKMOD=1
Dmobs=1+(UA(T)+UC(T)⋅Veseff)⋅(Eeffs)EU+[21⋅(1+1e−2/Coxqis)]UCS(T)UD(T)
(3.304)
Dmobs=U0MULTDmobs(3.305)
If RDSMOD=0 then
Rds,s=[Weff0(μm)]WRi1⋅(RDSWMIN(T)+1+PRWGSi⋅qisRDSW(T))(3.306)
If RDSMOD=1 then
Rds,s=0(3.307)
If RDSMOD=2 then
Rds,s=[Weff0(μm)]WRi1⋅(RSgeo+RDgeo+RDSWMIN(T)+1+PRWGSi⋅qisRDSW(T))(3.308)
Esat=μ0(T)/Dmobs2⋅VSAT(T)(3.309)
EsatL=Esat⋅Leff(3.310)
Here, RSgeo and RDgeo are geometry dependent (bias indepedent) part of source and drain resistances. In
RDSMOD=2 they are included in Rds,s calculation and no extra node is created. See Section 3.15 for details.
If Rds,s=0 then
Vdsat=EsatL+KSATIVi⋅(Vgsfbeff−ψs+2qkT)EsatL⋅KSATIVi⋅(Vgsfbeff−ψs+2qkT)(3.311)
Else,
WVCox=Weff0⋅VSAT(T)⋅Cox(3.312)
Ta=2⋅WVCox⋅Rds,s(3.313)
Tb=KSATIVi⋅(Vgsfbeff−ψs+2qkT)⋅(1+3⋅WVCox⋅Rds,s)+EsatL(3.314)
Tc=KSATIVi⋅(Vgsfbeff−ψs+2qkT)×[EsatL+Ta⋅KSATIVi⋅(Vgsfbeff−ψs+2qkT)](3.315)
Vdsat=TaTb−√Tb2−2TaTc(3.316)
Vdseff=[1+(VdsatVds)MEXP(T)]1/MEXP(T)Vds(3.317)