7.1 Instance Parameters

Note: Instance parameters with superscript ${}^{(m)}$ are also model parameters.

• Parameter: $L^{(m)}$
• Description: Designed gate length.
• Default: 30 nm
• Range: > 1 nm
• Unit: $m$

• Parameter: $D^{(m)}$
• Description: Diameter of cylinder for $GEOMOD$ = 3.
• Default: 40 nm
• Range: > 1 nm
• Unit: $m$

• Parameter: $TFIN^{(m)}$
• Description: Fin thickness.
• Default: 15 nm
• Range: > 1 nm
• Unit: $m$

• Parameter: $FPITCH^{(m)}$
• Description: Fin pitch.
• Default: 80 nm
• Range: > $TFIN$
• Unit: $m$

• Parameter: $NF$
• Description: Number of fingers.
• Default: 1
• Range: > 1
• Unitless

• Parameter: $NFIN^{(m)}$
• Description: Number of fins per finger.
• Default: 1
• Range: > 0
• Unitless

• Parameter: $NFINNOM^{(m)}$
• Description: Nominal number of fins per finger.
• Default: 1
• Range: > 0
• Unitless

• Parameter: $NGCON^{(m)}$
• Description: Number of gate contacts.
• Default: 1
• Range: 1 or 2
• Unitless

• Parameter: $ASEO^{(m)}$
• Description: Source-to-substrate overlap area through oxide for all fingers.
• Default: 0
• Range: > 0
• Unit: $m^2$

• Parameter: $ADEO^{(m)}$
• Description: Drain-to-substrate overlap area through oxide for all fingers.
• Default: 0
• Range: > 0
• Unit: $m^2$

• Parameter: $PSEO^{(m)}$
• Description: Perimeter of source-to-substrate overlap region through oxide for all fingers.
• Default: 0
• Range: > 0
• Unit: $m$

• Parameter: $PDEO^{(m)}$
• Description: Perimeter of drain-to-substrate overlap region through oxide for all fingers.
• Default: 0
• Range: > 0
• Unit: $m$

• Parameter: $ASEJ^{(m)}$
• Description: Source junction area for all fingers; for bulk MuGFETs, $BULKMOD$ = 1.
• Default: 0
• Range: > 0
• Unit: $m^2$

• Parameter: $ADEJ^{(m)}$
• Description: Drain junction area for all fingers; for bulk MuGFETs, $BULKMOD$ = 1.
• Default: 0
• Range: > 0
• Unit: $m^2$

• Parameter: $PSEJ^{(m)}$
• Description: Source junction perimeter for all fingers; for bulk MuGFETs, $BULKMOD$ = 1.
• Default: 0
• Range: > 0
• Unit: $m$

• Parameter: $PDEJ^{(m)}$
• Description: Drain junction perimeter for all fingers; for bulk MuGFETs, $BULKMOD$ = 1.
• Default: 0
• Range: > 0
• Unit: $m$

• Parameter: $COVS^{(m)}$
• Description: Constant gate-to-source overlap capacitance for $CGEOMOD$ = 1.
• Default: 0
• Range: > 0
• Unit: $F/m$, see $CGEO1SW$.

• Parameter: $COVD^{(m)}$
• Description: Constant gate-to-drain overlap capacitance for $CGEOMOD$ = 1.
• Default: $COVS$
• Range: > 0
• Unit: $F/m$, see $CGEO1SW$.

• Parameter: $CGSP^{(m)}$
• Description: Constant gate-to-source fringe capacitance for $CGEOMOD$ = 1.
• Default: 0
• Range: > 0
• Unit: $F/m$, see $CGEO1SW$.

• Parameter: $CGDP^{(m)}$
• Description: Constant gate-to-drain fringe capacitance for $CGEOMOD$ = 1.
• Default: 0
• Range: > 0
• Unit: $F/m$, see $CGEO1SW$.

• Parameter: $CDSP^{(m)}$
• Description: Constant drain-to-source fringe capacitance.
• Default: 0
• Range: > 0
• Unit: $F$

• Parameter: $NRS^{(m)}$
• Description: Number of source diffusion squares for $RGEOMOD$ = 0.
• Default: 0
• Range: > 0
• Unitless

• Parameter: $NRD^{(m)}$
• Description: Number of drain diffusion squares for $RGEOMOD$ = 0.
• Default: 0
• Range: > 0
• Unitless

• Parameter: $LRSD^{(m)}$
• Description: Length of the source/drain.
• Default: $L$
• Range: > 0
• Unit: $m$