3.18.1 Gate Resistance Model

NQS effects for $NQSMOD = 1$ is modeled through an effective intrinsic input resistance, $R_{ii}$ [16]. This would introduce a gate node in between the intrinsic gate and the physical gate electrode resistance ($RGATEMOD$). This node collapses to the intrinsic gate if the user turns off this model.

$I_{dovVds} = \mu_0(T) \cdot C_{ox} \cdot \dfrac{W_{eff}}{L_{eff}} \cdot q_{ia} \cdot \dfrac{M_{oc}}{D_{vsat}} \qquad (3.540)$

$\dfrac{1}{R_{ii}} = NF \cdot NFIN \cdot XRCRG1_i \cdot \Bigg( I_{dovVds} + XRCRG2_i \cdot \dfrac{\mu_{eff} \cdot C_{oxe} \cdot W_{eff} \cdot kT}{q \cdot L_{eff}} \Bigg)$

$(3.541)$

References

[16] X. Jin, J.-J. Ou, C.-H. Chen, W. Liu, M. J. Deen, P. R. Gray, and C. Hu, "An Effective Gate Resistance Model for CMOS RF and Noise Modeling," in IEDM Technical Digest, 1998, p. 961.