7.6 Parameters for Variability Modeling

A set of parameters causing variability in device behavior are identified. Users can associate appropriate variability function as appropriate. The list is open to modification with users feedbacks and suggestions. Other than $DELVTRAND$, $UOMULT$ and $IDS0MULT$, the parameters listed here were already introduced previously as either instance parameters or model parameters. All of the follow- ing parameters should be elevated to instance parameter status if required for variability modeling or should be delegated to a model parameter status (unless introduced before as an instance parameter).

Note: Parameters already introduced as instance parameters are marked: ${ }^{(i)}$ and model parameters are marked: ${ }^{(m)}$.

• Parameter: $DTEMP$
• Description: Device temperature shift handle.
• Default: 0
• Range: Unbounded
• Unit: $K$

• Parameter: $DELVTRAND$
• Description: Threshold voltage shift handle.
• Default: 0
• Range: Unbounded
• Unit: $V$

• Parameter: $U0MULT$
• Description: Multiplier to divide mobility degradation $D_{mob}$ and $D_{mobs}$.
• Default: 1.0
• Range: Unbounded
• Unitless

• Parameter: $IDS0MULT$
• Description: Multiplier to source-drain channel current.
• Default: 1.0
• Range: Unbounded
• Unitless

• Parameter: $TFIN^{(i)}$
• Description: Fin thickness.
• Default: 15 nm
• Range: > 1 nm
• Unit: $m$

• Parameter: $FPITCH^{(i)}$
• Description: Fin pitch.
• Default: 80 nm
• Range: $> TFIN$
• Unit: $m$

• Parameter: $XL^{(m)}$
• Description: $L$ offset for channel length due to mask/etch effect.
• Default: 0
• Range: Unbounded
• Unit: $m$

• Parameter: $NBODY^{(m)}$
• Description: Channel doping concentration.
• Default: 1.0e22
• Range: 1.0e18 ~ 5.0e24
• Unit: $m^{-3}$

• Parameter: $EOT^{(m)}$
• Description: $SiO_2$ equivalent gate dielectric thickness including inversion layer thickness.
• Default: 1 nm
• Range: > 0.1 nm
• Unit: $m$

• Parameter: $TOXP^{(m)}$
• Description: Physical oxide thickness.
• Default: 1.2 nm
• Range: > 0.1 nm
• Unit: $m$

• Parameter: $RSHS^{(m)}$
• Description: Source-side sheet resistance.
• Default: 0
• Range: > 0
• Unit: $\Omega$

• Parameter: $RSHD^{(m)}$
• Description: Drain-side sheet resistance.
• Default: $RSHS$
• Range: > 0
• Unit: $\Omega$

• Parameter: $RHOC^{(m)}$
• Description: Contact resistivity at the silicon/silicide interface.
• Default: 1.0e-12
• Range: 1.0e-18 ~ 1.0e-8
• Unit: $\Omega - m^2$

• Parameter: $RHORSD^{(m)}$
• Description: Average resistivity of silicon in the raised source/drain region.
• Default: Calculated
• Range: > 0
• Unit: $\Omega - m$