7.3.2 Basic Model Parameters - Part 2

Note: Binnable parameters are marked as ${}^{(b)}$.

• Parameter: $RSDR$
• Description: For $RDSMOD$ = 1, source side drift resistance parameter in forward mode.
• Default: 0
• Range: > 0
• Unit: $V^{-PRSDR}$

• Parameter: $RSDRR$
• Description: For $RDSMOD$ = 1, source side drift resistance parameter in reverse mode.
• Default: $RSDR$
• Range: > 0
• Unit: $V^{-PRSDR}$

• Parameter: $RDDR$
• Description: For $RDSMOD$ = 1, drain side drift resistance parameter in forward mode.
• Default: $RSDR$
• Range: > 0
• Unit: $V^{-PRSDR}$

• Parameter: $RSDRR$
• Description: For $RDSMOD$ = 1, drain side drift resistance parameter in reverse mode.
• Default: $RDDR$
• Range: > 0
• Unit: $V^{-PRSDR}$

• Parameter: $PRWGS^{(b)}$
• Description: Source side quasi-saturation parameter.
• Default: 0
• Range: > 0
• Unit: $1/V$

• Parameter: $PRWGD^{(b)}$
• Description: Drain side quasi-saturation parameter.
• Default: $PRWGS$
• Range: > 0
• Unit: $1/V$

• Parameter: $PRSDR$
• Description: For $RDSMOD$ = 1, drain side drift resistance parameter in forward mode.
• Default: 1.0
• Range: > 0
• Unitless

• Parameter: $PRDDR$
• Description: For $RDSMOD$ = 1, drain side drift resistance parameter in reverse mode.
• Default: $PRSDR$
• Range: > 0
• Unitless

• Parameter: $WR^{(b)}$
• Description: W dependence parameter of S/D extension resistance.
• Default: 1.0
• Range: Unbounded
• Unitless

• Parameter: $RGEXT$
• Description: Effective gate electrode external resistance.
• Default: 0
• Range: > 0
• Unit: $\Omega$

• Parameter: $RGFIN$
• Description: Effective gate electrode resistance per fin per finger.
• Default: 0.001
• Range: > 0.001
• Unit: $\Omega$

• Parameter: $RSHS$
• Description: Source-side sheet resistance.
• Default: 0
• Range: > 0
• Unit: $\Omega$

• Parameter: $RSHD$
• Description: Drain-side sheet resistance.
• Default: $RSHS$
• Range: > 0
• Unit: $\Omega$

• Parameter: $PDIBL1^{(b)}$
• Description: Parameter for DIBL effect on Rout in forward mode.
• Default: 1.3
• Range: > 0
• Unitless

• Parameter: $PDIBL1R^{(b)}$
• Description: Parameter for DIBL effect on Rout in reverse mode.
• Default: $PDIBL1$
• Range: > 0
• Unitless

• Parameter: $PDIBL2^{(b)}$
• Description: Parameter for DIBL effect on $R_{out}$.
• Default: 0.0002
• Range: > 0
• Unitless

• Parameter: $DROUT^{(b)}$
• Description: L dependence of DIBL effect on $R_{out}$.
• Default: 1.06
• Range: > 0
• Unitless

• Parameter: $PVAG^{(b)}$
• Description: $V_{gs}$ dependence on early voltage.
• Default: 1.0
• Range: Unbounded
• Unitless

• Parameter: $TOXREF$
• Description: Nominal gate oxide thickness for gate tunneling current.
• Default: 1.2 nm
• Range: > 0
• Unit: $m$

• Parameter: $TOXG$
• Description: Oxide thickness for gate current model.
• Default: $TOXP$
• Range: > 0
• Unit: $m$

• Parameter: $NTOX^{(b)}$
• Description: Exponent for gate oxide ratio.
• Default: 1.0
• Range: Unbounded
• Unitless

• Parameter: $AIGBINV^{(b)}$
• Description: Parameter for $I_{gb}$ in inversion.
• Default: 0.0111
• Range: Unbounded
• Unit: $(F-s^2/g)^{0.5} \times m^{-1}$

• Parameter: $BIGBINV^{(b)}$
• Description: Parameter for $I_{gb}$ in inversion.
• Default: 0.000949
• Range: Unbounded
• Unit: $(F-s^2/g)^{0.5} \times (m-V)^{-1}$

• Parameter: $CIGBINV^{(b)}$
• Description: Parameter for $I_{gb}$ in inversion.
• Default: 0.006
• Range: Unbounded
• Unit: $V^{-1}$

• Parameter: $EIGBINV^{(b)}$
• Description: Parameter for $I_{gb}$ in inversion.
• Default: 1.1
• Range: Unbounded
• Unit: $V$

• Parameter: $NIGBINV^{(b)}$
• Description: Parameter for $I_{gb}$ in inversion.
• Default: 3.0
• Range: > 0
• Unitless

• Parameter: $AIGBACC^{(b)}$
• Description: Parameter for $I_{gb}$ in accumulation.
• Default: 0.0136
• Range: Unbounded
• Unit: $(F-s^2/g)^{0.5} \times m^{-1}$

• Parameter: $BIGBACC^{(b)}$
• Description: Parameter for $I_{gb}$ in accumulation.
• Default: 0.00171
• Range: Unbounded
• Unit: $(F-s^2/g)^{0.5} \times (m-V)^{-1}$

• Parameter: $CIGBACC^{(b)}$
• Description: Parameter for $I_{gb}$ in accumulation.
• Default: 7.5e-2
• Range: Unbounded
• Unit: $V^{-1}$

• Parameter: $NIGBACC^{(b)}$
• Description: Parameter for $I_{gb}$ in accumulation.
• Default: 1.0
• Range: > 0
• Unitless

• Parameter: $AIGC^{(b)}$
• Description: Parameter for $I_{gc}$ in inversion.
• Default: 1.36e-2
• Range: Unbounded
• Unit: $(F-s^2/g)^{0.5} \times m^{-1}$

• Parameter: $BIGC^{(b)}$
• Description: Parameter for $I_{gc}$ in inversion.
• Default: 1.71e-3
• Range: Unbounded
• Unit: $(F-s^2/g)^{0.5} \times (m-V)^{-1}$

• Parameter: $CIGC^{(b)}$
• Description: Parameter for $I_{gc}$ in inversion.
• Default: 0.075
• Range: Unbounded
• Unit: $V^{-1}$

• Parameter: $PIGCD^{(b)}$
• Description: $V_{ds}$ dependence of $I_{gcs}$ and $I_{gcd}$.
• Default: 1.0
• Range: > 0
• Unitless

• Parameter: $DLCIGS$
• Description: Delta $L$ for $I_{gs}$ model.
• Default: 0
• Range: Unbounded
• Unit: $m$

• Parameter: $AIGS^{(b)}$
• Description: Parameter for $I_{gs}$ in inversion.
• Default: 0.0136
• Range: Unbounded
• Unit: $(F-s^2/g)^{0.5} \times m^{-1}$

• Parameter: $BIGS^{(b)}$
• Description: Parameter for $I_{gs}$ in inversion.
• Default: 0.00171
• Range: Unbounded
• Unit: $(F-s^2/g)^{0.5} \times (m-V)^{-1}$

• Parameter: $CIGS^{(b)}$
• Description: Parameter for $I_{gs}$ in inversion.
• Default: 0.075
• Range: Unbounded
• Unit: $V^{-1}$

• Parameter: $DLCIGD$
• Description: Delta $L$ for $I_{gd}$ model.
• Default: $DLCIGS$
• Range: Unbounded
• Unit: $m$

• Parameter: $AIGD^{(b)}$
• Description: Parameter for $I_{gd}$ in inversion.
• Default: $AIGS$
• Range: Unbounded
• Unit: $(F-s^2/g)^{0.5} \times m^{-1}$

• Parameter: $BIGD^{(b)}$
• Description: Parameter for $I_{gd}$ in inversion.
• Default: $BIGS$
• Range: Unbounded
• Unit: $(F-s^2/g)^{0.5} \times (m-V)^{-1}$

• Parameter: $CIGD^{(b)}$
• Description: Parameter for $I_{gd}$ in inversion.
• Default: $CIGS$
• Range: Unbounded
• Unit: $V^{-1}$

• Parameter: $VFBSD$
• Description: Flatband voltage for S/D region.
• Default: 0
• Range: Unbounded
• Unit: $V$

• Parameter: $VFBSDCV$
• Description: Flat band voltage for S/D region for C-V calculations.
• Default: $VFBSD$
• Range: Unbounded
• Unit: $V$

• Parameter: $POXEDGE^{(b)}$
• Description: Factor for the gate edge $T_{ox}$.
• Default: 1
• Range: > 0
• Unitless

• Parameter: $AGIDL^{(b)}$
• Description: Pre-exponetial coefficient for GIDL.
• Default: 6.055e-12
• Range: Unbounded
• Unit: $\Omega^{-1}$

• Parameter: $BGIDL^{(b)}$
• Description: Exponential coefficient for GIDL.
• Default: 0.3e9
• Range: Unbounded
• Unit: $V/m$

• Parameter: $CGIDL^{(b)}$
• Description: Parameter for body bias effect of GIDL.
• Default: 0.2
• Range: Unbounded
• Unit: $V^3$

• Parameter: $EGIDL^{(b)}$
• Description: Band bending parameter for GIDL.
• Default: 0.2
• Range: Unbounded
• Unit: $V$

• Parameter: $PGIDL^{(b)}$
• Description: Exponent of electric field for GIDL.
• Default: 1.0
• Range: Unbounded
• Unitless

• Parameter: $AGISL^{(b)}$
• Description: Pre-exponetial coefficient for GISL.
• Default: $AIGDL$
• Range: Unbounded
• Unit: $\Omega^{-1}$

• Parameter: $BGISL^{(b)}$
• Description: Exponential coefficient for GISL.
• Default: $BGIDL$
• Range: Unbounded
• Unit: $V/m$

• Parameter: $CGISL^{(b)}$
• Description: Parameter for body bias effect of GISL.
• Default: 0.2
• Range: Unbounded
• Unit: $V^3$

• Parameter: $EGISL^{(b)}$
• Description: Band bending parameter for GISL.
• Default: $EGIDL$
• Range: Unbounded
• Unit: $V$

• Parameter: $PGISL^{(b)}$
• Description: Exponent of electric field for GISL.
• Default: 1.0
• Range: Unbounded
• Unitless

• Parameter: $ALPHA0^{(b)}$
• Description: First parameter of $I_{ii}$ for $IIMOD$ = 1.
• Default: 0
• Range: Unbounded
• Unit: $m \cdot V^{-1}$

• Parameter: $ALPHA1^{(b)}$
• Description: $L$ scaling parameter of $I_{ii}$ for $IIMOD$ = 1.
• Default: 0
• Range: Unbounded
• Unit: $V^{-1}$

• Parameter: $ALPHAII0^{(b)}$
• Description: First parameter of $I_{ii}$ for $IIMOD$ = 2.
• Default: 0
• Range: Unbounded
• Unit: $m \cdot V^{-1}$

• Parameter: $ALPHAII1^{(b)}$
• Description: $L$ scaling parameter of $I_{ii}$ for $IIMOD$ = 2.
• Default: 0
• Range: Unbounded
• Unit: $V^{-1}$

• Parameter: $BETA0^{(b)}$
• Description: $V_{ds}$-dependent paramter of $I_{ii}$ for $IIMOD$ = 1.
• Default: 0
• Range: Unbounded
• Unit: $V^{-1}$

• Parameter: $BETAII0^{(b)}$
• Description: $V_{ds}$-dependent paramter of $I_{ii}$ for $IIMOD$ = 2.
• Default: 0
• Range: Unbounded
• Unit: $V^{-1}$

• Parameter: $BETAII1^{(b)}$
• Description: $V_{ds}$-dependent paramter of $I_{ii}$ for $IIMOD$ = 2.
• Default: 0
• Range: Unbounded
• Unitless

• Parameter: $BETAII2^{(b)}$
• Description: $V_{ds}$-dependent paramter of $I_{ii}$ for $IIMOD$ = 2.
• Default: 0.1
• Range: Unbounded
• Unit: $V$

• Parameter: $ESATII^{(b)}$
• Description: Saturation channel E-field for $I_{ii}$ for $IIMOD$ = 2.
• Default: 1.0e7
• Range: Unbounded
• Unit: $V/m$

• Parameter: $LII^{(b)}$
• Description: Channel length dependent parameter of $I_{ii}$ for $IIMOD$ = 2.
• Default: 0.5e-9
• Range: Unbounded
• Unit: $V-m$